A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application
Despite the continuous downscaling of complementary metal–oxide–semiconductor (CMOS) devices, various scenarios of technology have also been proposed toward the shrinking of semiconductor memory. In this paper, a high-density memory (HDM) has been proposed on the basis of band-to-band tunneling (BTB...
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| Format: | Article |
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MDPI AG
2021-08-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/16/1954 |
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| author | Chen Wang Xiuli Zhao Hao Liu Xin Chao Hao Zhu Qingqing Sun |
| author_facet | Chen Wang Xiuli Zhao Hao Liu Xin Chao Hao Zhu Qingqing Sun |
| author_sort | Chen Wang |
| collection | DOAJ |
| description | Despite the continuous downscaling of complementary metal–oxide–semiconductor (CMOS) devices, various scenarios of technology have also been proposed toward the shrinking of semiconductor memory. In this paper, a high-density memory (HDM) has been proposed on the basis of band-to-band tunneling (BTBT) for low-power, high density, and high-speed memory applications. The geometric structure and electrical properties have been demonstrated by using TCAD tools. Typical memory operations including read, program, and erase have been designed and performed. High operation speed, lower power consumption, as well as good reliability characteristics have been achieved by simulation, which indicates that the HDM may have potential application value as a novel semiconductor memory device. |
| first_indexed | 2024-03-10T08:52:40Z |
| format | Article |
| id | doaj.art-7446e5372b164b97a048167b27e608e3 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T08:52:40Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-7446e5372b164b97a048167b27e608e32023-11-22T07:25:02ZengMDPI AGElectronics2079-92922021-08-011016195410.3390/electronics10161954A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory ApplicationChen Wang0Xiuli Zhao1Hao Liu2Xin Chao3Hao Zhu4Qingqing Sun5School of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaDespite the continuous downscaling of complementary metal–oxide–semiconductor (CMOS) devices, various scenarios of technology have also been proposed toward the shrinking of semiconductor memory. In this paper, a high-density memory (HDM) has been proposed on the basis of band-to-band tunneling (BTBT) for low-power, high density, and high-speed memory applications. The geometric structure and electrical properties have been demonstrated by using TCAD tools. Typical memory operations including read, program, and erase have been designed and performed. High operation speed, lower power consumption, as well as good reliability characteristics have been achieved by simulation, which indicates that the HDM may have potential application value as a novel semiconductor memory device.https://www.mdpi.com/2079-9292/10/16/1954high-density memoryband-to-band tunnelinglower powerreliability characteristichigh operation speed |
| spellingShingle | Chen Wang Xiuli Zhao Hao Liu Xin Chao Hao Zhu Qingqing Sun A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application Electronics high-density memory band-to-band tunneling lower power reliability characteristic high operation speed |
| title | A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application |
| title_full | A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application |
| title_fullStr | A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application |
| title_full_unstemmed | A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application |
| title_short | A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application |
| title_sort | high density memory design based on self aligned tunneling window for large capacity memory application |
| topic | high-density memory band-to-band tunneling lower power reliability characteristic high operation speed |
| url | https://www.mdpi.com/2079-9292/10/16/1954 |
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