Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading
Design and simulations of an integrated photonic device that can optically detect the magnetization direction of its ultra-thin (∼12 nm) metal cladding, thus ‘reading’ the stored magnetic memory, are presented. The device is an unbalanced Mach Zehnder Interferometer (MZI) based on InP Membrane on Si...
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| Format: | Article |
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MDPI AG
2020-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/22/8267 |
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| author | Figen Ece Demirer Chris van den Bomen Reinoud Lavrijsen Jos J. G. M. van der Tol Bert Koopmans |
| author_facet | Figen Ece Demirer Chris van den Bomen Reinoud Lavrijsen Jos J. G. M. van der Tol Bert Koopmans |
| author_sort | Figen Ece Demirer |
| collection | DOAJ |
| description | Design and simulations of an integrated photonic device that can optically detect the magnetization direction of its ultra-thin (∼12 nm) metal cladding, thus ‘reading’ the stored magnetic memory, are presented. The device is an unbalanced Mach Zehnder Interferometer (MZI) based on InP Membrane on Silicon (IMOS) platform. The MZI consists of a ferromagnetic thin-film cladding and a delay line in one branch, and a polarization converter in the other. It quantitatively measures the non-reciprocal phase shift caused by the Magneto-Optic Kerr Effect in the guided mode which depends on the memory bit’s magnetization direction. The current design is an analytical tool for research exploration of all-optical magnetic memory reading. It has been shown that the device is able to read a nanoscale memory bit (400 × 50 × 12 nm) by using a Kerr rotation as small as <inline-formula><math display="inline"><semantics><mrow><msup><mn>0.2</mn><mo>∘</mo></msup></mrow></semantics></math></inline-formula>, in the presence of a noise ∼10 dB in terms of signal-to-noise ratio. The device is shown to tolerate performance reductions that can arise during the fabrication. |
| first_indexed | 2024-03-10T14:41:01Z |
| format | Article |
| id | doaj.art-74d6d81a9c1049c2b8b002ef6da06cb9 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T14:41:01Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-74d6d81a9c1049c2b8b002ef6da06cb92023-11-20T21:49:54ZengMDPI AGApplied Sciences2076-34172020-11-011022826710.3390/app10228267Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory ReadingFigen Ece Demirer0Chris van den Bomen1Reinoud Lavrijsen2Jos J. G. M. van der Tol3Bert Koopmans4Department of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsDepartment of Electrical Engineering, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsDesign and simulations of an integrated photonic device that can optically detect the magnetization direction of its ultra-thin (∼12 nm) metal cladding, thus ‘reading’ the stored magnetic memory, are presented. The device is an unbalanced Mach Zehnder Interferometer (MZI) based on InP Membrane on Silicon (IMOS) platform. The MZI consists of a ferromagnetic thin-film cladding and a delay line in one branch, and a polarization converter in the other. It quantitatively measures the non-reciprocal phase shift caused by the Magneto-Optic Kerr Effect in the guided mode which depends on the memory bit’s magnetization direction. The current design is an analytical tool for research exploration of all-optical magnetic memory reading. It has been shown that the device is able to read a nanoscale memory bit (400 × 50 × 12 nm) by using a Kerr rotation as small as <inline-formula><math display="inline"><semantics><mrow><msup><mn>0.2</mn><mo>∘</mo></msup></mrow></semantics></math></inline-formula>, in the presence of a noise ∼10 dB in terms of signal-to-noise ratio. The device is shown to tolerate performance reductions that can arise during the fabrication.https://www.mdpi.com/2076-3417/10/22/8267integrated photonicsInPmagneto-opticMZImode conversionPMA |
| spellingShingle | Figen Ece Demirer Chris van den Bomen Reinoud Lavrijsen Jos J. G. M. van der Tol Bert Koopmans Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading Applied Sciences integrated photonics InP magneto-optic MZI mode conversion PMA |
| title | Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading |
| title_full | Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading |
| title_fullStr | Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading |
| title_full_unstemmed | Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading |
| title_short | Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading |
| title_sort | design and modelling of a novel integrated photonic device for nano scale magnetic memory reading |
| topic | integrated photonics InP magneto-optic MZI mode conversion PMA |
| url | https://www.mdpi.com/2076-3417/10/22/8267 |
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