Response of 4H-SiC Detectors to Ionizing Particles
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm<sup>2</sup>), while all detectors had the same 4H-SiC epi-layer thickness of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-12-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/1/10 |
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| author | Robert Bernat Ivana Capan Luka Bakrač Tomislav Brodar Takahiro Makino Takeshi Ohshima Željko Pastuović Adam Sarbutt |
| author_facet | Robert Bernat Ivana Capan Luka Bakrač Tomislav Brodar Takahiro Makino Takeshi Ohshima Željko Pastuović Adam Sarbutt |
| author_sort | Robert Bernat |
| collection | DOAJ |
| description | We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm<sup>2</sup>), while all detectors had the same 4H-SiC epi-layer thickness of approximately µm, sufficient to stop alpha particles up to 6.8 MeV, which have been used in this study. The detector response to the various alpha emitters in the 3.27 MeV to 8.79 MeV energy range clearly demonstrates the excellent linear response to alpha emissions of the detectors with the increasing active area. The detector response in gamma radiation field of Co-60 and Cs-137 sources showed a linear response to air kerma and to different air kerma rates as well, up to 4.49 Gy/h. The detector response is not in saturation for the dose rates lower than 15.3 mGy/min and that its measuring range for gamma radiation with energies of 662 keV, 1.17 MeV and 1.33 MeV is from 0.5 mGy/h–917 mGy/h. No changes to electrical properties of pristine and tested 4H-SiC SBD detectors, supported by a negligible change in carbon vacancy defect density and no creation of other deep levels, demonstrates the radiation hardness of these 4H-SiC detectors. |
| first_indexed | 2024-03-10T13:47:31Z |
| format | Article |
| id | doaj.art-74f635f5a6f24749b509f65d8d38eab7 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T13:47:31Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-74f635f5a6f24749b509f65d8d38eab72023-11-21T02:28:18ZengMDPI AGCrystals2073-43522020-12-011111010.3390/cryst11010010Response of 4H-SiC Detectors to Ionizing ParticlesRobert Bernat0Ivana Capan1Luka Bakrač2Tomislav Brodar3Takahiro Makino4Takeshi Ohshima5Željko Pastuović6Adam Sarbutt7Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, CroatiaNational Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki 370-1292, JapanNational Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki 370-1292, JapanAustralian Nuclear Science and Technology Organisation, 1 New Illawarra Rd., Lucas Heights, NSW 2234, AustraliaAustralian Nuclear Science and Technology Organisation, 1 New Illawarra Rd., Lucas Heights, NSW 2234, AustraliaWe report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm<sup>2</sup>), while all detectors had the same 4H-SiC epi-layer thickness of approximately µm, sufficient to stop alpha particles up to 6.8 MeV, which have been used in this study. The detector response to the various alpha emitters in the 3.27 MeV to 8.79 MeV energy range clearly demonstrates the excellent linear response to alpha emissions of the detectors with the increasing active area. The detector response in gamma radiation field of Co-60 and Cs-137 sources showed a linear response to air kerma and to different air kerma rates as well, up to 4.49 Gy/h. The detector response is not in saturation for the dose rates lower than 15.3 mGy/min and that its measuring range for gamma radiation with energies of 662 keV, 1.17 MeV and 1.33 MeV is from 0.5 mGy/h–917 mGy/h. No changes to electrical properties of pristine and tested 4H-SiC SBD detectors, supported by a negligible change in carbon vacancy defect density and no creation of other deep levels, demonstrates the radiation hardness of these 4H-SiC detectors.https://www.mdpi.com/2073-4352/11/1/10silicon carbideradiation detectorradiation responsealpha particlesgamma radiation |
| spellingShingle | Robert Bernat Ivana Capan Luka Bakrač Tomislav Brodar Takahiro Makino Takeshi Ohshima Željko Pastuović Adam Sarbutt Response of 4H-SiC Detectors to Ionizing Particles Crystals silicon carbide radiation detector radiation response alpha particles gamma radiation |
| title | Response of 4H-SiC Detectors to Ionizing Particles |
| title_full | Response of 4H-SiC Detectors to Ionizing Particles |
| title_fullStr | Response of 4H-SiC Detectors to Ionizing Particles |
| title_full_unstemmed | Response of 4H-SiC Detectors to Ionizing Particles |
| title_short | Response of 4H-SiC Detectors to Ionizing Particles |
| title_sort | response of 4h sic detectors to ionizing particles |
| topic | silicon carbide radiation detector radiation response alpha particles gamma radiation |
| url | https://www.mdpi.com/2073-4352/11/1/10 |
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