The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions
Abstract Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and co...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2021-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03581-4 |
| _version_ | 1827843736290197504 |
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| author | Caihong Li Juntong Zhu Wen Du Yixuan Huang Hao Xu Zhengang Zhai Guifu Zou |
| author_facet | Caihong Li Juntong Zhu Wen Du Yixuan Huang Hao Xu Zhengang Zhai Guifu Zou |
| author_sort | Caihong Li |
| collection | DOAJ |
| description | Abstract Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures. |
| first_indexed | 2024-03-12T08:30:49Z |
| format | Article |
| id | doaj.art-7529ca0422c2475d84d0947a89d50789 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:30:49Z |
| publishDate | 2021-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7529ca0422c2475d84d0947a89d507892023-09-02T17:45:48ZengSpringerOpenNanoscale Research Letters1556-276X2021-07-011611910.1186/s11671-021-03581-4The Photodetectors Based on Lateral Monolayer MoS2/WS2 HeterojunctionsCaihong Li0Juntong Zhu1Wen Du2Yixuan Huang3Hao Xu4Zhengang Zhai5Guifu Zou6Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of Chinathe College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow UniversityInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of ChinaInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of ChinaSchool of Physics, University of Electronic Science and Technology of Chinathe 36th Research Institute of China Electronics Technology Group Corporationthe College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow UniversityAbstract Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.https://doi.org/10.1186/s11671-021-03581-4Lateral monolayer heterostructureMoS2/WS2 heterojunctionPhotodetectorSharp interface |
| spellingShingle | Caihong Li Juntong Zhu Wen Du Yixuan Huang Hao Xu Zhengang Zhai Guifu Zou The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions Nanoscale Research Letters Lateral monolayer heterostructure MoS2/WS2 heterojunction Photodetector Sharp interface |
| title | The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions |
| title_full | The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions |
| title_fullStr | The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions |
| title_full_unstemmed | The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions |
| title_short | The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions |
| title_sort | photodetectors based on lateral monolayer mos2 ws2 heterojunctions |
| topic | Lateral monolayer heterostructure MoS2/WS2 heterojunction Photodetector Sharp interface |
| url | https://doi.org/10.1186/s11671-021-03581-4 |
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