Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications
Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO<i><sub>x</sub></i>/HfO<sub>2</sub>) was fabricated, and its syna...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-08-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/8/1550 |
| _version_ | 1797559763288981504 |
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| author | Hojeong Ryu Sungjun Kim |
| author_facet | Hojeong Ryu Sungjun Kim |
| author_sort | Hojeong Ryu |
| collection | DOAJ |
| description | Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO<i><sub>x</sub></i>/HfO<sub>2</sub>) was fabricated, and its synaptic applications were characterized. Device deposition was confirmed through TEM imaging and EDS analysis. During the forming and set processes, switching of the memristor device can be divided into three types by compliance current and cycling control. Filamentary switching has strengths in terms of endurance and retention, but conductance is low. On the other hand, for interface-type switching, conductance is increased, but at the cost of endurance and retention. In order to overcome this dilemma, we proposed pseudo interface-type switching, and obtained excellent retention, decent endurance, and a variety of conductance levels that can be modulated by pulse response. The recognition rate calculated by the neural network simulation using the Fashion Modified National Institute of Standards and Technology database (MNIST) dataset, and the measured conductance values show that pseudo interface-type switching produces results that are similar to those of an interface-type device. |
| first_indexed | 2024-03-10T17:49:57Z |
| format | Article |
| id | doaj.art-752d5c4b97704db3880c062509c4c71f |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T17:49:57Z |
| publishDate | 2020-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-752d5c4b97704db3880c062509c4c71f2023-11-20T09:23:54ZengMDPI AGNanomaterials2079-49912020-08-01108155010.3390/nano10081550Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic ApplicationsHojeong Ryu0Sungjun Kim1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaMemristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO<i><sub>x</sub></i>/HfO<sub>2</sub>) was fabricated, and its synaptic applications were characterized. Device deposition was confirmed through TEM imaging and EDS analysis. During the forming and set processes, switching of the memristor device can be divided into three types by compliance current and cycling control. Filamentary switching has strengths in terms of endurance and retention, but conductance is low. On the other hand, for interface-type switching, conductance is increased, but at the cost of endurance and retention. In order to overcome this dilemma, we proposed pseudo interface-type switching, and obtained excellent retention, decent endurance, and a variety of conductance levels that can be modulated by pulse response. The recognition rate calculated by the neural network simulation using the Fashion Modified National Institute of Standards and Technology database (MNIST) dataset, and the measured conductance values show that pseudo interface-type switching produces results that are similar to those of an interface-type device.https://www.mdpi.com/2079-4991/10/8/1550memristorsynapse deviceneuromorphic computingtantalum oxidehafnium oxide |
| spellingShingle | Hojeong Ryu Sungjun Kim Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications Nanomaterials memristor synapse device neuromorphic computing tantalum oxide hafnium oxide |
| title | Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications |
| title_full | Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications |
| title_fullStr | Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications |
| title_full_unstemmed | Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications |
| title_short | Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications |
| title_sort | pseudo interface switching of a two terminal tao i sub x sub i hfo sub 2 sub synaptic device for neuromorphic applications |
| topic | memristor synapse device neuromorphic computing tantalum oxide hafnium oxide |
| url | https://www.mdpi.com/2079-4991/10/8/1550 |
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