Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications

Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications

Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO<i><sub>x</sub></i>/HfO<sub>2</sub>) was fabricated, and its syna...

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Bibliographic Details
Main Authors: Hojeong Ryu, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Nanomaterials
Subjects:
memristor
synapse device
neuromorphic computing
tantalum oxide
hafnium oxide
Online Access:https://www.mdpi.com/2079-4991/10/8/1550

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