| Summary: | The study investigated the photoluminescent properties of undoped and rare-earth element erbium - doped solid solutions GaS1-xSex0.1аt% irradiated with gamma-quanta. Erbium doping reduces the photoluminescence intensity in solid solutions. After irradiation Dg= 300-1000Gy, the photoluminescence intensity increases. An increase in the photoluminescence intensity in irradiated solid solutions is explained by a decrease in the concentration of centers responsible for the fast recombination channel and associated with lattice defects. At T=77K, due to the decay of bound Frenkel pairs, Si and Vs appear in the sulfur sublattice. The Si defects are responsible for the increase in the intensity of the green luminescence band. The redistribution of photoluminescence intensity in the range of 0.520 - 0.600 µm is due to the transfer energy to rare-earth centers in activated crystals. The performed investigations allow us to conclude that doping with erbium leads the appearance of a series of emission lines in the visible region of the spectrum.
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