Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device
Siliconization using 10 % SiD4 + 90 % He assisted by ion cyclotron range of frequency discharge (ICRF) or glow discharge (GD) was performed in EAST with full tungsten (W) diverters. It was found that the coated Si film on W sample at a higher baking temperature (160 °C) was smoother than that at a l...
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| Format: | Article |
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Elsevier
2023-03-01
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| Series: | Nuclear Materials and Energy |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352179123000078 |
| _version_ | 1811154401119698944 |
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| author | Yanhong Guan Guizhong Zuo Xiancai Meng Wei Xu Yaowei Yu Ming Huang Lin Li Jiansheng Hu |
| author_facet | Yanhong Guan Guizhong Zuo Xiancai Meng Wei Xu Yaowei Yu Ming Huang Lin Li Jiansheng Hu |
| author_sort | Yanhong Guan |
| collection | DOAJ |
| description | Siliconization using 10 % SiD4 + 90 % He assisted by ion cyclotron range of frequency discharge (ICRF) or glow discharge (GD) was performed in EAST with full tungsten (W) diverters. It was found that the coated Si film on W sample at a higher baking temperature (160 °C) was smoother than that at a lower baking temperature (60 °C). This was mainly because physically adsorbed gaseous impurities were released at a higher baker temperature. This process improved the adhesion between the film and the surface of W. An increase in the ICRF working power from 20 kW to 40 kW further increased the Si content and the film thickness by 1.5 times. The cleaning efficiency of ICRF on the surface of the W sample before siliconization was higher at 40 kW than that at 20 kW, which facilitated the removal of oxides and other compounds from the surface of W. The ratio of silicon/oxygen (Si/O) and the thickness improved considerably due to greater ionization and deposition of SiD4. Additionally, siliconization via GD was more uniform and 1.5 nm thicker than that via ICRF, which was because of the greater working gas pressure, coating duration, and homogeneity in GD. These results might be used as a reference for evaluating the effect of siliconization on plasma performance and its application in fusion devices. |
| first_indexed | 2024-04-10T04:15:02Z |
| format | Article |
| id | doaj.art-755abc4e964a44f1b1d8bbfe4e534277 |
| institution | Directory Open Access Journal |
| issn | 2352-1791 |
| language | English |
| last_indexed | 2024-04-10T04:15:02Z |
| publishDate | 2023-03-01 |
| publisher | Elsevier |
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| series | Nuclear Materials and Energy |
| spelling | doaj.art-755abc4e964a44f1b1d8bbfe4e5342772023-03-12T04:21:29ZengElsevierNuclear Materials and Energy2352-17912023-03-0134101368Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion deviceYanhong Guan0Guizhong Zuo1Xiancai Meng2Wei Xu3Yaowei Yu4Ming Huang5Lin Li6Jiansheng Hu7Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China; University of Science and Technology of China, Hefei, Anhui 230026, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China; Corresponding authors at: Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China (X.C. Meng).Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China; Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui 230026, China; Corresponding authors at: Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China (X.C. Meng).Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui 230026, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China; University of Science and Technology of China, Hefei, Anhui 230026, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China; CAS key Laboratory of Photovoltaic and Energy Conservation Materials, Hefei 230031, ChinaSiliconization using 10 % SiD4 + 90 % He assisted by ion cyclotron range of frequency discharge (ICRF) or glow discharge (GD) was performed in EAST with full tungsten (W) diverters. It was found that the coated Si film on W sample at a higher baking temperature (160 °C) was smoother than that at a lower baking temperature (60 °C). This was mainly because physically adsorbed gaseous impurities were released at a higher baker temperature. This process improved the adhesion between the film and the surface of W. An increase in the ICRF working power from 20 kW to 40 kW further increased the Si content and the film thickness by 1.5 times. The cleaning efficiency of ICRF on the surface of the W sample before siliconization was higher at 40 kW than that at 20 kW, which facilitated the removal of oxides and other compounds from the surface of W. The ratio of silicon/oxygen (Si/O) and the thickness improved considerably due to greater ionization and deposition of SiD4. Additionally, siliconization via GD was more uniform and 1.5 nm thicker than that via ICRF, which was because of the greater working gas pressure, coating duration, and homogeneity in GD. These results might be used as a reference for evaluating the effect of siliconization on plasma performance and its application in fusion devices.http://www.sciencedirect.com/science/article/pii/S2352179123000078SiliconizationTungstenPlasmaEAST |
| spellingShingle | Yanhong Guan Guizhong Zuo Xiancai Meng Wei Xu Yaowei Yu Ming Huang Lin Li Jiansheng Hu Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device Nuclear Materials and Energy Siliconization Tungsten Plasma EAST |
| title | Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device |
| title_full | Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device |
| title_fullStr | Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device |
| title_full_unstemmed | Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device |
| title_short | Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device |
| title_sort | investigation of the silicon coated film characteristics on tungsten surface in east fusion device |
| topic | Siliconization Tungsten Plasma EAST |
| url | http://www.sciencedirect.com/science/article/pii/S2352179123000078 |
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