A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6681899/ |
| Summary: | Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide layer, thereby avoiding disturbing the CMOS process. This technology, which can also be applied to the 0.13 μm generation, has been used for applications ranging from high-speed ones like automotive radar and 40 Gbps optical communication to consumer ones like wireless. |
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| ISSN: | 2168-6734 |