Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method
Silicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to their superior properties. However, formation mechanism of the SiCNWs synthesized by the thermal evaporation method without metal catalyst is still unclear. To understand the formation mechanism, SiCNWs were syn...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2014-09-01
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| Series: | Journal of Asian Ceramic Societies |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2187076414000529 |
| _version_ | 1819023569355538432 |
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| author | Noppasint Jiraborvornpongsa Sae Enomoto Masamitsu Imai Katsumi Yoshida Toyohiko Yano |
| author_facet | Noppasint Jiraborvornpongsa Sae Enomoto Masamitsu Imai Katsumi Yoshida Toyohiko Yano |
| author_sort | Noppasint Jiraborvornpongsa |
| collection | DOAJ |
| description | Silicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to their superior properties. However, formation mechanism of the SiCNWs synthesized by the thermal evaporation method without metal catalyst is still unclear. To understand the formation mechanism, SiCNWs were synthesized by the thermal evaporation method at 1350 °C using a pre-oxidized Si powder and CH4 gas as precursors. SiCNWs obtained by this method were β-SiC/SiO2 core–shell nanowires with average diameter about 55 nm and with a length up to 1 mm. The exhaust gases during the SiCNWs synthesis process were examined by gas chromatography and the photographs of growth activity of SiCNWs inside the furnace were captured. CO gas was detected during the active formation of SiCNWs. It was clarified that CO gas was one of the byproducts from SiCNWs synthesis process, and the formation reaction of SiCNWs should be 3SiO(g) + 3C(s) → 2SiC(s) + SiO2(s) + CO(g). The formation of SiCNWs was discussed based on the oxide-assisted-growth mechanism. |
| first_indexed | 2024-12-21T04:40:59Z |
| format | Article |
| id | doaj.art-7565567eac54428ea4e46f03f95da328 |
| institution | Directory Open Access Journal |
| issn | 2187-0764 |
| language | English |
| last_indexed | 2024-12-21T04:40:59Z |
| publishDate | 2014-09-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Asian Ceramic Societies |
| spelling | doaj.art-7565567eac54428ea4e46f03f95da3282022-12-21T19:15:42ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642014-09-012323524010.1016/j.jascer.2014.05.004Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation methodNoppasint Jiraborvornpongsa0Sae Enomoto1Masamitsu Imai2Katsumi Yoshida3Toyohiko Yano4Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, JapanDepartment of Nuclear Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, JapanResearch Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, JapanResearch Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, JapanResearch Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, JapanSilicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to their superior properties. However, formation mechanism of the SiCNWs synthesized by the thermal evaporation method without metal catalyst is still unclear. To understand the formation mechanism, SiCNWs were synthesized by the thermal evaporation method at 1350 °C using a pre-oxidized Si powder and CH4 gas as precursors. SiCNWs obtained by this method were β-SiC/SiO2 core–shell nanowires with average diameter about 55 nm and with a length up to 1 mm. The exhaust gases during the SiCNWs synthesis process were examined by gas chromatography and the photographs of growth activity of SiCNWs inside the furnace were captured. CO gas was detected during the active formation of SiCNWs. It was clarified that CO gas was one of the byproducts from SiCNWs synthesis process, and the formation reaction of SiCNWs should be 3SiO(g) + 3C(s) → 2SiC(s) + SiO2(s) + CO(g). The formation of SiCNWs was discussed based on the oxide-assisted-growth mechanism.http://www.sciencedirect.com/science/article/pii/S2187076414000529SiC nanowireThermal evaporation methodGas chromatographyFormation mechanismGrowth activity |
| spellingShingle | Noppasint Jiraborvornpongsa Sae Enomoto Masamitsu Imai Katsumi Yoshida Toyohiko Yano Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method Journal of Asian Ceramic Societies SiC nanowire Thermal evaporation method Gas chromatography Formation mechanism Growth activity |
| title | Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method |
| title_full | Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method |
| title_fullStr | Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method |
| title_full_unstemmed | Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method |
| title_short | Exhaust gas analysis and formation mechanism of SiC nanowires synthesized by thermal evaporation method |
| title_sort | exhaust gas analysis and formation mechanism of sic nanowires synthesized by thermal evaporation method |
| topic | SiC nanowire Thermal evaporation method Gas chromatography Formation mechanism Growth activity |
| url | http://www.sciencedirect.com/science/article/pii/S2187076414000529 |
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