Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented GaAs has the potential to reduce substrate costs f...

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Bibliographic Details
Main Authors: Jacob T. Boyer, Anna K. Braun, Kevin L. Schulte, John Simon, Steven W. Johnston, Harvey L. Guthrey, Myles A. Steiner, Corinne E. Packard, Aaron J. Ptak
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Crystals
Subjects:
photovoltaics
spalling
III-V
crystalline defects
HVPE
device characterization
Online Access:https://www.mdpi.com/2073-4352/13/4/681

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