Fabrication and characteristics of porous germanium films
Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top la...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2009-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/10/6/065001 |
| _version_ | 1828451432462811136 |
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| author | Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu |
| author_facet | Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu |
| author_sort | Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu |
| collection | DOAJ |
| description | Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm−3) and a maximum of Hall mobility at ~225 K. Their p-type conductivity is dominated by the defect scattering mechanism. |
| first_indexed | 2024-12-10T23:36:27Z |
| format | Article |
| id | doaj.art-75d7e3e717cd4f76aeb52e18eda249a5 |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-10T23:36:27Z |
| publishDate | 2009-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-75d7e3e717cd4f76aeb52e18eda249a52022-12-22T01:29:10ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142009-01-01106065001Fabrication and characteristics of porous germanium filmsChengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao ChuPorous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm−3) and a maximum of Hall mobility at ~225 K. Their p-type conductivity is dominated by the defect scattering mechanism.http://www.iop.org/EJ/abstract/1468-6996/10/6/065001germaniumporous structured filmvisible photoluminescencesemiconducting behavior |
| spellingShingle | Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu Fabrication and characteristics of porous germanium films Science and Technology of Advanced Materials germanium porous structured film visible photoluminescence semiconducting behavior |
| title | Fabrication and characteristics of porous germanium films |
| title_full | Fabrication and characteristics of porous germanium films |
| title_fullStr | Fabrication and characteristics of porous germanium films |
| title_full_unstemmed | Fabrication and characteristics of porous germanium films |
| title_short | Fabrication and characteristics of porous germanium films |
| title_sort | fabrication and characteristics of porous germanium films |
| topic | germanium porous structured film visible photoluminescence semiconducting behavior |
| url | http://www.iop.org/EJ/abstract/1468-6996/10/6/065001 |
| work_keys_str_mv | AT chengbinjingchuanjianzhangxiaodanzangwenzhengzhouweibaitielinandjunhaochu fabricationandcharacteristicsofporousgermaniumfilms |