X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films
Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit hi...
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MDPI AG
2021-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/3/239 |
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| author | Monzer Maarouf Muhammad Baseer Haider Qasem Ahmed Drmosh Mogtaba B. Mekki |
| author_facet | Monzer Maarouf Muhammad Baseer Haider Qasem Ahmed Drmosh Mogtaba B. Mekki |
| author_sort | Monzer Maarouf |
| collection | DOAJ |
| description | Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films. |
| first_indexed | 2024-03-09T06:18:49Z |
| format | Article |
| id | doaj.art-75e69935a2d34555b2308eae97e3d891 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T06:18:49Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-75e69935a2d34555b2308eae97e3d8912023-12-03T11:49:35ZengMDPI AGCrystals2073-43522021-02-0111323910.3390/cryst11030239X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin FilmsMonzer Maarouf0Muhammad Baseer Haider1Qasem Ahmed Drmosh2Mogtaba B. Mekki3Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi ArabiaDepartment of Physics, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi ArabiaCenter of Excellence for Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi ArabiaDepartment of Physics, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi ArabiaTitanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.https://www.mdpi.com/2073-4352/11/3/239thin film semiconductorstitanium nitridemagnetron sputteringX-ray photoelectron spectroscopyatomic force microscopy |
| spellingShingle | Monzer Maarouf Muhammad Baseer Haider Qasem Ahmed Drmosh Mogtaba B. Mekki X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films Crystals thin film semiconductors titanium nitride magnetron sputtering X-ray photoelectron spectroscopy atomic force microscopy |
| title | X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films |
| title_full | X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films |
| title_fullStr | X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films |
| title_full_unstemmed | X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films |
| title_short | X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films |
| title_sort | x ray photoelectron spectroscopy depth profiling of as grown and annealed titanium nitride thin films |
| topic | thin film semiconductors titanium nitride magnetron sputtering X-ray photoelectron spectroscopy atomic force microscopy |
| url | https://www.mdpi.com/2073-4352/11/3/239 |
| work_keys_str_mv | AT monzermaarouf xrayphotoelectronspectroscopydepthprofilingofasgrownandannealedtitaniumnitridethinfilms AT muhammadbaseerhaider xrayphotoelectronspectroscopydepthprofilingofasgrownandannealedtitaniumnitridethinfilms AT qasemahmeddrmosh xrayphotoelectronspectroscopydepthprofilingofasgrownandannealedtitaniumnitridethinfilms AT mogtababmekki xrayphotoelectronspectroscopydepthprofilingofasgrownandannealedtitaniumnitridethinfilms |