Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures
In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals,...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2018-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718300032 |
| _version_ | 1818148531124305920 |
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| author | Qing-Yang Yue Yang Yang Zhen-Jia Cheng Cheng-Shan Guo |
| author_facet | Qing-Yang Yue Yang Yang Zhen-Jia Cheng Cheng-Shan Guo |
| author_sort | Qing-Yang Yue |
| collection | DOAJ |
| description | In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs. Keywords: GaN-based LEDs, Light extraction efficiency, Quasi-periodic structure |
| first_indexed | 2024-12-11T12:52:37Z |
| format | Article |
| id | doaj.art-75f00b7c560b4659adfa8ee7f431a507 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-11T12:52:37Z |
| publishDate | 2018-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-75f00b7c560b4659adfa8ee7f431a5072022-12-22T01:06:40ZengElsevierResults in Physics2211-37972018-06-01913451351Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructuresQing-Yang Yue0Yang Yang1Zhen-Jia Cheng2Cheng-Shan Guo3Corresponding author.; School of Physics and Electronics, Shandong Normal University, Jinan 250014, ChinaSchool of Physics and Electronics, Shandong Normal University, Jinan 250014, ChinaSchool of Physics and Electronics, Shandong Normal University, Jinan 250014, ChinaSchool of Physics and Electronics, Shandong Normal University, Jinan 250014, ChinaIn this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs. Keywords: GaN-based LEDs, Light extraction efficiency, Quasi-periodic structurehttp://www.sciencedirect.com/science/article/pii/S2211379718300032 |
| spellingShingle | Qing-Yang Yue Yang Yang Zhen-Jia Cheng Cheng-Shan Guo Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures Results in Physics |
| title | Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures |
| title_full | Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures |
| title_fullStr | Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures |
| title_full_unstemmed | Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures |
| title_short | Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures |
| title_sort | numerical analysis of light extraction enhancement of gan based thin film flip chip light emitting diodes with high refractive index buckling nanostructures |
| url | http://www.sciencedirect.com/science/article/pii/S2211379718300032 |
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