Effects of Vacancy and Hydrogen on the Growth and Morphology of N-Type Phosphorus-Doped Diamond Surfaces
Phosphorus is regarded as the best substitutional donor for n-type diamonds. However, because of vacancy-related complexes, H-related complexes, and other defects in P-doped diamonds, obtaining n-type diamonds with satisfying properties is challenging. In this report, PV and PVH complexes are studie...
Main Authors: | Siyuan Nie, Wei Shen, Shengnan Shen, Hui Li, Yuanhui Pan, Yuechang Sun, Yinghua Chen, Haiqin Qi |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-02-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/11/4/1896 |
Similar Items
-
First principles calculation of lithium-phosphorus co-doped diamond
by: Q.Y. Shao, et al.
Published: (2013-03-01) -
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
by: Lilian Mieko da Silva, et al.
Published: (2015-11-01) -
Doped Diamond: A Compact Review on a New, Versatile Electrode Material
by: Alexander Kraft
Published: (2007-05-01) -
Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film
by: Hangyu Long, et al.
Published: (2023-03-01) -
Thermionic Emission from Diamond Films in Molecular Hydrogen Environments
by: William F. Paxton, et al.
Published: (2017-12-01)