Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method
The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, T...
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| Format: | Article |
| Language: | English |
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Department of Chemistry, Universitas Gadjah Mada
2020-05-01
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| Series: | Indonesian Journal of Chemistry |
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| Online Access: | https://jurnal.ugm.ac.id/ijc/article/view/49331 |
| _version_ | 1818852486087180288 |
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| author | Ibnu Jihad Juhri Hendrawan Adam Sukma Putra Kuwat Triyana Moh. Adhib Ulil Absor |
| author_facet | Ibnu Jihad Juhri Hendrawan Adam Sukma Putra Kuwat Triyana Moh. Adhib Ulil Absor |
| author_sort | Ibnu Jihad |
| collection | DOAJ |
| description | The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device. |
| first_indexed | 2024-12-19T07:21:41Z |
| format | Article |
| id | doaj.art-75f8937a6d304a7da0f7675a325dd8e9 |
| institution | Directory Open Access Journal |
| issn | 1411-9420 2460-1578 |
| language | English |
| last_indexed | 2024-12-19T07:21:41Z |
| publishDate | 2020-05-01 |
| publisher | Department of Chemistry, Universitas Gadjah Mada |
| record_format | Article |
| series | Indonesian Journal of Chemistry |
| spelling | doaj.art-75f8937a6d304a7da0f7675a325dd8e92022-12-21T20:30:55ZengDepartment of Chemistry, Universitas Gadjah MadaIndonesian Journal of Chemistry1411-94202460-15782020-05-0120369770410.22146/ijc.4933126394Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT methodIbnu Jihad0Juhri Hendrawan1Adam Sukma Putra2Kuwat Triyana3Moh. Adhib Ulil Absor4Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, IndonesiaThe Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.https://jurnal.ugm.ac.id/ijc/article/view/49331ge monochalcogenidessn monochalcogenidesdft methodspintronicssquare latticerashba effectspin textures |
| spellingShingle | Ibnu Jihad Juhri Hendrawan Adam Sukma Putra Kuwat Triyana Moh. Adhib Ulil Absor Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method Indonesian Journal of Chemistry ge monochalcogenides sn monochalcogenides dft method spintronics square lattice rashba effect spin textures |
| title | Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method |
| title_full | Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method |
| title_fullStr | Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method |
| title_full_unstemmed | Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method |
| title_short | Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method |
| title_sort | rashba effect on buckled square lattice ge and sn chalcogenides mx m ge sn x o s se te using dft method |
| topic | ge monochalcogenides sn monochalcogenides dft method spintronics square lattice rashba effect spin textures |
| url | https://jurnal.ugm.ac.id/ijc/article/view/49331 |
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