Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor
Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online assessment of the degradation state of IGBTs...
Main Authors: | Xiangxiang Liu, Lingling Li, Diganta Das, Ijaz Haider Naqvi, Michael G. Pecht |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9050802/ |
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