Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor
Abstract Neuromorphic system based on artificial synaptic devices is considered as a potential candidate to realize the in‐memory computing and parallel processing of data for overcoming the von Neumann bottleneck. However, to fully imitate the complicated functions of the biological neural networks...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-01-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202200733 |
| _version_ | 1797772530170200064 |
|---|---|
| author | Wen‐Ai Mo Guanglong Ding Zihao Nie Zihao Feng Kui Zhou Ruo‐Si Chen Peng Xie Gang Shang Su‐Ting Han Ye Zhou |
| author_facet | Wen‐Ai Mo Guanglong Ding Zihao Nie Zihao Feng Kui Zhou Ruo‐Si Chen Peng Xie Gang Shang Su‐Ting Han Ye Zhou |
| author_sort | Wen‐Ai Mo |
| collection | DOAJ |
| description | Abstract Neuromorphic system based on artificial synaptic devices is considered as a potential candidate to realize the in‐memory computing and parallel processing of data for overcoming the von Neumann bottleneck. However, to fully imitate the complicated functions of the biological neural networks at the hardware level is still a challenging task. In this work, a multi‐terminal MoS2 synaptic transistor is developed, which not only simulates various biological synaptic behaviors, including paired pulse facilitation (PPF), excitatory/inhibitory post‐synaptic current (EPSC/IPSC), spike‐rate‐dependent plasticity (SRDP), and spike‐timing‐dependent plasticity (STDP), but also can independently mimic the parallel signal processing and transmissions in biological multipolar neurons. By combining the multi‐terminal MoS2 synaptic transistor with the micro‐structured polydimethylsiloxane (PDMS) pressure sensors, an intelligent tactile recognition system is built up, which can realize the spatiotemporal recognition of touch position. Furthermore, with sensor selection, the spatiotemporal modulation of synaptic plasticity and the human learning and forgetting behaviors to the knowledge with different difficulty degrees can be mimicked. This work provides a novel interconnection scheme for simulating signal transmission and processing among neurons, showing broad application prospects of the multi‐terminal MoS2 synaptic transistor in intelligent human–computer interaction and bionic neuromorphic perception systems. |
| first_indexed | 2024-03-12T21:52:14Z |
| format | Article |
| id | doaj.art-7645159254d446a3ae592d5ae1eb3b40 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:52:14Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-7645159254d446a3ae592d5ae1eb3b402023-07-26T01:35:51ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-01-0191n/an/a10.1002/aelm.202200733Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic TransistorWen‐Ai Mo0Guanglong Ding1Zihao Nie2Zihao Feng3Kui Zhou4Ruo‐Si Chen5Peng Xie6Gang Shang7Su‐Ting Han8Ye Zhou9College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaShenzhen Key Laboratory of Flexible Memory Materials and Devices Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. ChinaShenzhen Key Laboratory of Flexible Memory Materials and Devices Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaAbstract Neuromorphic system based on artificial synaptic devices is considered as a potential candidate to realize the in‐memory computing and parallel processing of data for overcoming the von Neumann bottleneck. However, to fully imitate the complicated functions of the biological neural networks at the hardware level is still a challenging task. In this work, a multi‐terminal MoS2 synaptic transistor is developed, which not only simulates various biological synaptic behaviors, including paired pulse facilitation (PPF), excitatory/inhibitory post‐synaptic current (EPSC/IPSC), spike‐rate‐dependent plasticity (SRDP), and spike‐timing‐dependent plasticity (STDP), but also can independently mimic the parallel signal processing and transmissions in biological multipolar neurons. By combining the multi‐terminal MoS2 synaptic transistor with the micro‐structured polydimethylsiloxane (PDMS) pressure sensors, an intelligent tactile recognition system is built up, which can realize the spatiotemporal recognition of touch position. Furthermore, with sensor selection, the spatiotemporal modulation of synaptic plasticity and the human learning and forgetting behaviors to the knowledge with different difficulty degrees can be mimicked. This work provides a novel interconnection scheme for simulating signal transmission and processing among neurons, showing broad application prospects of the multi‐terminal MoS2 synaptic transistor in intelligent human–computer interaction and bionic neuromorphic perception systems.https://doi.org/10.1002/aelm.202200733artificial synapsesmemorypressure sensorstactile recognitiontransistors |
| spellingShingle | Wen‐Ai Mo Guanglong Ding Zihao Nie Zihao Feng Kui Zhou Ruo‐Si Chen Peng Xie Gang Shang Su‐Ting Han Ye Zhou Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor Advanced Electronic Materials artificial synapses memory pressure sensors tactile recognition transistors |
| title | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor |
| title_full | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor |
| title_fullStr | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor |
| title_full_unstemmed | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor |
| title_short | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor |
| title_sort | spatiotemporal modulation of plasticity in multi terminal tactile synaptic transistor |
| topic | artificial synapses memory pressure sensors tactile recognition transistors |
| url | https://doi.org/10.1002/aelm.202200733 |
| work_keys_str_mv | AT wenaimo spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT guanglongding spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT zihaonie spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT zihaofeng spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT kuizhou spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT ruosichen spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT pengxie spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT gangshang spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT sutinghan spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor AT yezhou spatiotemporalmodulationofplasticityinmultiterminaltactilesynaptictransistor |