Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach

Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach

A numerical simulation methodology for incorporating thermo-magnetic effects on the MOSFET gate tunneling current is introduced. The methodology is based on the solution of the Schrödinger-Poisson coupled system, which allows simulating the influence of a static magnetic field and temper...

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Bibliographic Details
Main Authors: Gabriela A. Rodriguez-Ruiz, Edmundo A. Gutierrez-D, L. Arturo Sarmiento-Reyes, Zlatan Stanojevic, Hans Kosina, Fernando J. Guarin, Pedro J. Garcia-R
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nano-scaled MOSFETs
Asymmetric tunneling current
Magnetic field
Temperature
Online Access:https://ieeexplore.ieee.org/document/7006685/

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