Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films
Cu(In,Ga)Se<sub>2</sub> (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing unde...
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2021-06-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/13/3596 |
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| author | Deewakar Poudel Benjamin Belfore Tasnuva Ashrafee Shankar Karki Grace Rajan Angus Rockett Sylvain Marsillac |
| author_facet | Deewakar Poudel Benjamin Belfore Tasnuva Ashrafee Shankar Karki Grace Rajan Angus Rockett Sylvain Marsillac |
| author_sort | Deewakar Poudel |
| collection | DOAJ |
| description | Cu(In,Ga)Se<sub>2</sub> (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium. |
| first_indexed | 2024-03-10T10:00:43Z |
| format | Article |
| id | doaj.art-76b7bc01c3b043c0bb9923d22d535981 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T10:00:43Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-76b7bc01c3b043c0bb9923d22d5359812023-11-22T01:58:14ZengMDPI AGMaterials1996-19442021-06-011413359610.3390/ma14133596Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin FilmsDeewakar Poudel0Benjamin Belfore1Tasnuva Ashrafee2Shankar Karki3Grace Rajan4Angus Rockett5Sylvain Marsillac6Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USADepartment of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USACu(In,Ga)Se<sub>2</sub> (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.https://www.mdpi.com/1996-1944/14/13/3596copper indium gallium selenidepost-deposition treatmentrecrystallizationindium bromide |
| spellingShingle | Deewakar Poudel Benjamin Belfore Tasnuva Ashrafee Shankar Karki Grace Rajan Angus Rockett Sylvain Marsillac Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films Materials copper indium gallium selenide post-deposition treatment recrystallization indium bromide |
| title | Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films |
| title_full | Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films |
| title_fullStr | Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films |
| title_full_unstemmed | Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films |
| title_short | Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films |
| title_sort | analysis of post deposition recrystallization processing via indium bromide of cu in ga se sub 2 sub thin films |
| topic | copper indium gallium selenide post-deposition treatment recrystallization indium bromide |
| url | https://www.mdpi.com/1996-1944/14/13/3596 |
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