HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma act...

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Dades bibliogràfiques
Autors principals:	P.V. Seredin, H. Leiste, A.S. Lenshin, A.M. Mizerov
Format:	Article
Idioma:	English
Publicat:	Elsevier 2020-03-01
Col·lecció:	Results in Physics
Matèries:	GaN SiC por-Si MBE PA HRXRD
Accés en línia:	http://www.sciencedirect.com/science/article/pii/S2211379719334503

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