HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma act...

Bibliografiset tiedot
Päätekijät:	P.V. Seredin, H. Leiste, A.S. Lenshin, A.M. Mizerov
Aineistotyyppi:	Artikkeli
Kieli:	English
Julkaistu:	Elsevier 2020-03-01
Sarja:	Results in Physics
Aiheet:	GaN SiC por-Si MBE PA HRXRD
Linkit:	http://www.sciencedirect.com/science/article/pii/S2211379719334503

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