HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma act...

书目详细资料
Main Authors:	P.V. Seredin, H. Leiste, A.S. Lenshin, A.M. Mizerov
格式:	文件
语言:	English
出版:	Elsevier 2020-03-01
丛编:	Results in Physics
主题:	GaN SiC por-Si MBE PA HRXRD
在线阅读:	http://www.sciencedirect.com/science/article/pii/S2211379719334503

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