Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor
The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunction...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Politehperiodika
2012-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2012/6_2012/pdf/09.zip |
| _version_ | 1818110541274546176 |
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| author | Kudrynskyi Z. R. Kovalyuk Z. D. |
| author_facet | Kudrynskyi Z. R. Kovalyuk Z. D. |
| author_sort | Kudrynskyi Z. R. |
| collection | DOAJ |
| description | The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band. |
| first_indexed | 2024-12-11T02:48:47Z |
| format | Article |
| id | doaj.art-76d60a67ae424db680e5567ccb78e224 |
| institution | Directory Open Access Journal |
| issn | 2225-5818 |
| language | English |
| last_indexed | 2024-12-11T02:48:47Z |
| publishDate | 2012-12-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-76d60a67ae424db680e5567ccb78e2242022-12-22T01:23:22ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182012-12-0164043Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vaporKudrynskyi Z. R.Kovalyuk Z. D.The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.http://www.tkea.com.ua/tkea/2012/6_2012/pdf/09.ziplayered crystalsheterojunctionsannealingspectral characteristicscurrent-voltage characteristics |
| spellingShingle | Kudrynskyi Z. R. Kovalyuk Z. D. Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor Tekhnologiya i Konstruirovanie v Elektronnoi Apparature layered crystals heterojunctions annealing spectral characteristics current-voltage characteristics |
| title | Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor |
| title_full | Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor |
| title_fullStr | Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor |
| title_full_unstemmed | Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor |
| title_short | Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor |
| title_sort | heterojunctions formed by annealing of gase and inse layered crystals in zinc vapor |
| topic | layered crystals heterojunctions annealing spectral characteristics current-voltage characteristics |
| url | http://www.tkea.com.ua/tkea/2012/6_2012/pdf/09.zip |
| work_keys_str_mv | AT kudrynskyizr heterojunctionsformedbyannealingofgaseandinselayeredcrystalsinzincvapor AT kovalyukzd heterojunctionsformedbyannealingofgaseandinselayeredcrystalsinzincvapor |