Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS
This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated casc...
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MDPI AG
2020-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/7/1058 |
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| author | Samuel B.S. Lee Hang Liu Kiat Seng Yeo Jer-Ming Chen Xiaopeng Yu |
| author_facet | Samuel B.S. Lee Hang Liu Kiat Seng Yeo Jer-Ming Chen Xiaopeng Yu |
| author_sort | Samuel B.S. Lee |
| collection | DOAJ |
| description | This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm. |
| first_indexed | 2024-03-10T18:51:23Z |
| format | Article |
| id | doaj.art-77392fc0bf6a4a90afe84b31b0057a67 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T18:51:23Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-77392fc0bf6a4a90afe84b31b0057a672023-11-20T05:06:47ZengMDPI AGElectronics2079-92922020-06-0197105810.3390/electronics9071058Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOSSamuel B.S. Lee0Hang Liu1Kiat Seng Yeo2Jer-Ming Chen3Xiaopeng Yu4Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, SingaporeCollege of Information Science and Electronic Engineering, Zhejiang University, 866 Yuhangtang Road, Xihu District, Hangzhou 310027, ChinaThis paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm.https://www.mdpi.com/2079-9292/9/7/1058cross-coupleddifferentialinductorlessregulated cascodethird-order interleaving feedbacktransimpedance |
| spellingShingle | Samuel B.S. Lee Hang Liu Kiat Seng Yeo Jer-Ming Chen Xiaopeng Yu Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS Electronics cross-coupled differential inductorless regulated cascode third-order interleaving feedback transimpedance |
| title | Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS |
| title_full | Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS |
| title_fullStr | Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS |
| title_full_unstemmed | Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS |
| title_short | Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS |
| title_sort | design of differential variable gain transimpedance amplifier in 0 18 µm sige bicmos |
| topic | cross-coupled differential inductorless regulated cascode third-order interleaving feedback transimpedance |
| url | https://www.mdpi.com/2079-9292/9/7/1058 |
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