Electronic g factor and magnetotransport in InSb quantum wells

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov–de Haas oscillations and find a value for the effect...

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Main Authors: Zijin Lei, Christian A. Lehner, Km Rubi, Erik Cheah, Matija Karalic, Christopher Mittag, Luca Alt, Jan Scharnetzky, Peter Märki, Uli Zeitler, Werner Wegscheider, Thomas Ihn, Klaus Ensslin
Format: Article
Language:English
Published: American Physical Society 2020-08-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.2.033213
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author Zijin Lei
Christian A. Lehner
Km Rubi
Erik Cheah
Matija Karalic
Christopher Mittag
Luca Alt
Jan Scharnetzky
Peter Märki
Uli Zeitler
Werner Wegscheider
Thomas Ihn
Klaus Ensslin
author_facet Zijin Lei
Christian A. Lehner
Km Rubi
Erik Cheah
Matija Karalic
Christopher Mittag
Luca Alt
Jan Scharnetzky
Peter Märki
Uli Zeitler
Werner Wegscheider
Thomas Ihn
Klaus Ensslin
author_sort Zijin Lei
collection DOAJ
description High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov–de Haas oscillations and find a value for the effective g factor of |g^{*}|=35±4 and a value for the effective mass of m^{*}≈0.017m_{e}, where m_{e} is the free electron mass. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g factor can be neglected. Accordingly, the obtained effective g factor and the effective mass can be explained in a single-particle picture. Additionally, we explore the magnetotransport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
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spelling doaj.art-774b02ad8da143e29fc1567278692ad32024-04-12T16:58:33ZengAmerican Physical SocietyPhysical Review Research2643-15642020-08-012303321310.1103/PhysRevResearch.2.033213Electronic g factor and magnetotransport in InSb quantum wellsZijin LeiChristian A. LehnerKm RubiErik CheahMatija KaralicChristopher MittagLuca AltJan ScharnetzkyPeter MärkiUli ZeitlerWerner WegscheiderThomas IhnKlaus EnsslinHigh mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov–de Haas oscillations and find a value for the effective g factor of |g^{*}|=35±4 and a value for the effective mass of m^{*}≈0.017m_{e}, where m_{e} is the free electron mass. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g factor can be neglected. Accordingly, the obtained effective g factor and the effective mass can be explained in a single-particle picture. Additionally, we explore the magnetotransport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.http://doi.org/10.1103/PhysRevResearch.2.033213
spellingShingle Zijin Lei
Christian A. Lehner
Km Rubi
Erik Cheah
Matija Karalic
Christopher Mittag
Luca Alt
Jan Scharnetzky
Peter Märki
Uli Zeitler
Werner Wegscheider
Thomas Ihn
Klaus Ensslin
Electronic g factor and magnetotransport in InSb quantum wells
Physical Review Research
title Electronic g factor and magnetotransport in InSb quantum wells
title_full Electronic g factor and magnetotransport in InSb quantum wells
title_fullStr Electronic g factor and magnetotransport in InSb quantum wells
title_full_unstemmed Electronic g factor and magnetotransport in InSb quantum wells
title_short Electronic g factor and magnetotransport in InSb quantum wells
title_sort electronic g factor and magnetotransport in insb quantum wells
url http://doi.org/10.1103/PhysRevResearch.2.033213
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