Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations
Transient characteristics of wurtzite Zn1−xMgxO are investigated using a three-valley Ensemble Monte Carlo model verified by the agreement between the simulated low-field mobility and the experiment result reported. The electronic structures are obtained by first principles calculations with density...
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AIP Publishing LLC
2015-01-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4907047 |
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author | Ping Wang Linlin Hu Yintang Yang Xuefei Shan Jiuxu Song Lixin Guo Zhiyong Zhang |
author_facet | Ping Wang Linlin Hu Yintang Yang Xuefei Shan Jiuxu Song Lixin Guo Zhiyong Zhang |
author_sort | Ping Wang |
collection | DOAJ |
description | Transient characteristics of wurtzite Zn1−xMgxO are investigated using a three-valley Ensemble Monte Carlo model verified by the agreement between the simulated low-field mobility and the experiment result reported. The electronic structures are obtained by first principles calculations with density functional theory. The results show that the peak electron drift velocities of Zn1−xMgxO (x = 11.1%, 16.7%, 19.4%, 25%) at 3000 kV/cm are 3.735 × 107, 2.133 × 107, 1.889 × 107, 1.295 × 107 cm/s, respectively. With the increase of Mg concentration, a higher electric field is required for the onset of velocity overshoot. When the applied field exceeds 2000 kV/cm and 2500 kV/cm, a phenomena of velocity undershoot is observed in Zn0.889Mg0.111O and Zn0.833Mg0.167O respectively, while it is not observed for Zn0.806Mg0.194O and Zn0.75Mg0.25O even at 3000 kV/cm which is especially important for high frequency devices. |
first_indexed | 2024-12-11T04:32:03Z |
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institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-11T04:32:03Z |
publishDate | 2015-01-01 |
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spelling | doaj.art-77504a76bf3645b98f8aa9dc8f9859da2022-12-22T01:20:49ZengAIP Publishing LLCAIP Advances2158-32262015-01-0151017145017145-1010.1063/1.4907047044501ADVMonte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculationsPing Wang0Linlin Hu1Yintang Yang2Xuefei Shan3Jiuxu Song4Lixin Guo5Zhiyong Zhang6State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi’an 710071, People’s Republic of ChinaState Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi’an 710071, People’s Republic of ChinaKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of ChinaState Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi’an 710071, People’s Republic of ChinaSchool of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071, People’s Republic of ChinaSchool of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071, People’s Republic of ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, People’s Republic of ChinaTransient characteristics of wurtzite Zn1−xMgxO are investigated using a three-valley Ensemble Monte Carlo model verified by the agreement between the simulated low-field mobility and the experiment result reported. The electronic structures are obtained by first principles calculations with density functional theory. The results show that the peak electron drift velocities of Zn1−xMgxO (x = 11.1%, 16.7%, 19.4%, 25%) at 3000 kV/cm are 3.735 × 107, 2.133 × 107, 1.889 × 107, 1.295 × 107 cm/s, respectively. With the increase of Mg concentration, a higher electric field is required for the onset of velocity overshoot. When the applied field exceeds 2000 kV/cm and 2500 kV/cm, a phenomena of velocity undershoot is observed in Zn0.889Mg0.111O and Zn0.833Mg0.167O respectively, while it is not observed for Zn0.806Mg0.194O and Zn0.75Mg0.25O even at 3000 kV/cm which is especially important for high frequency devices.http://dx.doi.org/10.1063/1.4907047 |
spellingShingle | Ping Wang Linlin Hu Yintang Yang Xuefei Shan Jiuxu Song Lixin Guo Zhiyong Zhang Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations AIP Advances |
title | Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations |
title_full | Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations |
title_fullStr | Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations |
title_full_unstemmed | Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations |
title_short | Monte Carlo analysis of transient electron transport in wurtzite Zn1−xMgxO combined with first principles calculations |
title_sort | monte carlo analysis of transient electron transport in wurtzite zn1 xmgxo combined with first principles calculations |
url | http://dx.doi.org/10.1063/1.4907047 |
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