Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection

Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden...

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Main Authors: Keyu Chen, Guan Yu Chen, Xinyi Hu, Hao Wu, Mingwei Gu, Yange Luan, Baoyue Zhang, Yihong Hu, Yinfen Cheng, Tao Tang, Haibo Huang, Liguo Chen, Jian Zhen Ou
Format: Article
Language:English
Published: Wiley-VCH 2024-01-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202300732
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author Keyu Chen
Guan Yu Chen
Xinyi Hu
Hao Wu
Mingwei Gu
Yange Luan
Baoyue Zhang
Yihong Hu
Yinfen Cheng
Tao Tang
Haibo Huang
Liguo Chen
Jian Zhen Ou
author_facet Keyu Chen
Guan Yu Chen
Xinyi Hu
Hao Wu
Mingwei Gu
Yange Luan
Baoyue Zhang
Yihong Hu
Yinfen Cheng
Tao Tang
Haibo Huang
Liguo Chen
Jian Zhen Ou
author_sort Keyu Chen
collection DOAJ
description Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO3 layer is formed between the substrate and 2D CeO2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W−1 while the detectivity reaches 7.58 × 1011 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices.
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spelling doaj.art-7752831987a2456492fbd3fa6bcb03f92024-01-17T05:39:56ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-01-01112n/an/a10.1002/admi.202300732Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance PhotodetectionKeyu Chen0Guan Yu Chen1Xinyi Hu2Hao Wu3Mingwei Gu4Yange Luan5Baoyue Zhang6Yihong Hu7Yinfen Cheng8Tao Tang9Haibo Huang10Liguo Chen11Jian Zhen Ou12Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Engineering RMIT University Melbourne 3000 AustraliaSchool of Engineering RMIT University Melbourne 3000 AustraliaSchool of Engineering RMIT University Melbourne 3000 AustraliaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaAbstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO3 layer is formed between the substrate and 2D CeO2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W−1 while the detectivity reaches 7.58 × 1011 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices.https://doi.org/10.1002/admi.202300732cerium dioxides (CeO2)chemical vapor deposition (CVD)lattice matchingphotodetectionrare earth oxides
spellingShingle Keyu Chen
Guan Yu Chen
Xinyi Hu
Hao Wu
Mingwei Gu
Yange Luan
Baoyue Zhang
Yihong Hu
Yinfen Cheng
Tao Tang
Haibo Huang
Liguo Chen
Jian Zhen Ou
Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
Advanced Materials Interfaces
cerium dioxides (CeO2)
chemical vapor deposition (CVD)
lattice matching
photodetection
rare earth oxides
title Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
title_full Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
title_fullStr Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
title_full_unstemmed Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
title_short Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
title_sort lattice matching engineering driven growth of large area 2d ceo2 for high performance photodetection
topic cerium dioxides (CeO2)
chemical vapor deposition (CVD)
lattice matching
photodetection
rare earth oxides
url https://doi.org/10.1002/admi.202300732
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