Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection
Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden...
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Wiley-VCH
2024-01-01
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Series: | Advanced Materials Interfaces |
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Online Access: | https://doi.org/10.1002/admi.202300732 |
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author | Keyu Chen Guan Yu Chen Xinyi Hu Hao Wu Mingwei Gu Yange Luan Baoyue Zhang Yihong Hu Yinfen Cheng Tao Tang Haibo Huang Liguo Chen Jian Zhen Ou |
author_facet | Keyu Chen Guan Yu Chen Xinyi Hu Hao Wu Mingwei Gu Yange Luan Baoyue Zhang Yihong Hu Yinfen Cheng Tao Tang Haibo Huang Liguo Chen Jian Zhen Ou |
author_sort | Keyu Chen |
collection | DOAJ |
description | Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO3 layer is formed between the substrate and 2D CeO2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W−1 while the detectivity reaches 7.58 × 1011 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices. |
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language | English |
last_indexed | 2024-03-08T13:32:30Z |
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publisher | Wiley-VCH |
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series | Advanced Materials Interfaces |
spelling | doaj.art-7752831987a2456492fbd3fa6bcb03f92024-01-17T05:39:56ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-01-01112n/an/a10.1002/admi.202300732Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance PhotodetectionKeyu Chen0Guan Yu Chen1Xinyi Hu2Hao Wu3Mingwei Gu4Yange Luan5Baoyue Zhang6Yihong Hu7Yinfen Cheng8Tao Tang9Haibo Huang10Liguo Chen11Jian Zhen Ou12Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Engineering RMIT University Melbourne 3000 AustraliaSchool of Engineering RMIT University Melbourne 3000 AustraliaSchool of Engineering RMIT University Melbourne 3000 AustraliaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaSchool of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced Robotics Soochow University Suzhou 215123 ChinaKey Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering Southwest Jiaotong University Chengdu 610031 ChinaAbstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO3 layer is formed between the substrate and 2D CeO2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W−1 while the detectivity reaches 7.58 × 1011 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices.https://doi.org/10.1002/admi.202300732cerium dioxides (CeO2)chemical vapor deposition (CVD)lattice matchingphotodetectionrare earth oxides |
spellingShingle | Keyu Chen Guan Yu Chen Xinyi Hu Hao Wu Mingwei Gu Yange Luan Baoyue Zhang Yihong Hu Yinfen Cheng Tao Tang Haibo Huang Liguo Chen Jian Zhen Ou Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection Advanced Materials Interfaces cerium dioxides (CeO2) chemical vapor deposition (CVD) lattice matching photodetection rare earth oxides |
title | Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection |
title_full | Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection |
title_fullStr | Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection |
title_full_unstemmed | Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection |
title_short | Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection |
title_sort | lattice matching engineering driven growth of large area 2d ceo2 for high performance photodetection |
topic | cerium dioxides (CeO2) chemical vapor deposition (CVD) lattice matching photodetection rare earth oxides |
url | https://doi.org/10.1002/admi.202300732 |
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