Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification
This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dis...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-06-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2073-4352/8/6/244 |
| _version_ | 1798034449082875904 |
|---|---|
| author | Tomoro Ide Hirofumi Harada Yoshiji Miyamura Masato Imai Satoshi Nakano Koichi Kakimoto |
| author_facet | Tomoro Ide Hirofumi Harada Yoshiji Miyamura Masato Imai Satoshi Nakano Koichi Kakimoto |
| author_sort | Tomoro Ide |
| collection | DOAJ |
| description | This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm−2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases. |
| first_indexed | 2024-04-11T20:44:28Z |
| format | Article |
| id | doaj.art-7757d49425c24a40b5f3ca6637677a7c |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T20:44:28Z |
| publishDate | 2018-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-7757d49425c24a40b5f3ca6637677a7c2022-12-22T04:04:05ZengMDPI AGCrystals2073-43522018-06-018624410.3390/cryst8060244cryst8060244Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional SolidificationTomoro Ide0Hirofumi Harada1Yoshiji Miyamura2Masato Imai3Satoshi Nakano4Koichi Kakimoto5Department of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanResearch Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, JapanResearch Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, JapanFaculty of Engineering, University of Miyazaki, Gakuen-kibanadai-nishi-1-1, Miyazaki 889-212, JapanResearch Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, JapanDepartment of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanThis paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm−2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases.http://www.mdpi.com/2073-4352/8/6/244directional solidification methodcrystal growth from the meltsemiconducting silicondefects |
| spellingShingle | Tomoro Ide Hirofumi Harada Yoshiji Miyamura Masato Imai Satoshi Nakano Koichi Kakimoto Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification Crystals directional solidification method crystal growth from the melt semiconducting silicon defects |
| title | Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification |
| title_full | Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification |
| title_fullStr | Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification |
| title_full_unstemmed | Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification |
| title_short | Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification |
| title_sort | relationship between dislocation density and oxygen concentration in silicon crystals during directional solidification |
| topic | directional solidification method crystal growth from the melt semiconducting silicon defects |
| url | http://www.mdpi.com/2073-4352/8/6/244 |
| work_keys_str_mv | AT tomoroide relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification AT hirofumiharada relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification AT yoshijimiyamura relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification AT masatoimai relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification AT satoshinakano relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification AT koichikakimoto relationshipbetweendislocationdensityandoxygenconcentrationinsiliconcrystalsduringdirectionalsolidification |