Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification

Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification

This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dis...

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Bibliographic Details
Main Authors:	Tomoro Ide, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Satoshi Nakano, Koichi Kakimoto
Format:	Article
Language:	English
Published:	MDPI AG 2018-06-01
Series:	Crystals
Subjects:	directional solidification method crystal growth from the melt semiconducting silicon defects
Online Access:	http://www.mdpi.com/2073-4352/8/6/244

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