Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
<p>Abstract</p> <p>The morphology and transition thickness (<it>t</it> <sub>c</sub>) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientatio...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2009-01-01
|
| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9304-z |
| _version_ | 1827838665409167360 |
|---|---|
| author | Wang Lu Li Meicheng Xiong Min Zhao Liancheng |
| author_facet | Wang Lu Li Meicheng Xiong Min Zhao Liancheng |
| author_sort | Wang Lu |
| collection | DOAJ |
| description | <p>Abstract</p> <p>The morphology and transition thickness (<it>t</it> <sub>c</sub>) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. And<it>t</it> <sub>c</sub>decreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology and<it>t</it> <sub>c</sub>can be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.</p> |
| first_indexed | 2024-03-12T07:08:11Z |
| format | Article |
| id | doaj.art-77c258e5176748449f196d39a4c4be7b |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:08:11Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-77c258e5176748449f196d39a4c4be7b2023-09-02T23:16:36ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0147689693Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) SubstratesWang LuLi MeichengXiong MinZhao Liancheng<p>Abstract</p> <p>The morphology and transition thickness (<it>t</it> <sub>c</sub>) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. And<it>t</it> <sub>c</sub>decreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology and<it>t</it> <sub>c</sub>can be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.</p>http://dx.doi.org/10.1007/s11671-009-9304-zInAsTransition thicknessHigh miller indexStrainInterfacial bonds |
| spellingShingle | Wang Lu Li Meicheng Xiong Min Zhao Liancheng Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates Nanoscale Research Letters InAs Transition thickness High miller index Strain Interfacial bonds |
| title | Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates |
| title_full | Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates |
| title_fullStr | Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates |
| title_full_unstemmed | Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates |
| title_short | Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates |
| title_sort | effect of interfacial bonds on the morphology of inas qds grown on gaas 311 b and 100 substrates |
| topic | InAs Transition thickness High miller index Strain Interfacial bonds |
| url | http://dx.doi.org/10.1007/s11671-009-9304-z |
| work_keys_str_mv | AT wanglu effectofinterfacialbondsonthemorphologyofinasqdsgrownongaas311band100substrates AT limeicheng effectofinterfacialbondsonthemorphologyofinasqdsgrownongaas311band100substrates AT xiongmin effectofinterfacialbondsonthemorphologyofinasqdsgrownongaas311band100substrates AT zhaoliancheng effectofinterfacialbondsonthemorphologyofinasqdsgrownongaas311band100substrates |