Strain Modulation of Selectively and/or Globally Grown Ge Layers
This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. T...
| Main Authors: | , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/6/1421 |
| _version_ | 1797532327998390272 |
|---|---|
| author | Yong Du Guilei Wang Yuanhao Miao Buqing Xu Ben Li Zhenzhen Kong Jiahan Yu Xuewei Zhao Hongxiao Lin Jiale Su Jianghao Han Jinbiao Liu Yan Dong Wenwu Wang Henry H. Radamson |
| author_facet | Yong Du Guilei Wang Yuanhao Miao Buqing Xu Ben Li Zhenzhen Kong Jiahan Yu Xuewei Zhao Hongxiao Lin Jiale Su Jianghao Han Jinbiao Liu Yan Dong Wenwu Wang Henry H. Radamson |
| author_sort | Yong Du |
| collection | DOAJ |
| description | This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 10<sup>7</sup> cm<sup>−2</sup>. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was −0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 10<sup>6</sup> cm<sup>−2</sup> and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm<sup>2</sup>/Vs, which is approximately 3 times larger than that of the Ge (132 cm<sup>2</sup>/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications. |
| first_indexed | 2024-03-10T10:57:34Z |
| format | Article |
| id | doaj.art-77c37057d19847b381b4f33cc24db007 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T10:57:34Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-77c37057d19847b381b4f33cc24db0072023-11-21T21:44:48ZengMDPI AGNanomaterials2079-49912021-05-01116142110.3390/nano11061421Strain Modulation of Selectively and/or Globally Grown Ge LayersYong Du0Guilei Wang1Yuanhao Miao2Buqing Xu3Ben Li4Zhenzhen Kong5Jiahan Yu6Xuewei Zhao7Hongxiao Lin8Jiale Su9Jianghao Han10Jinbiao Liu11Yan Dong12Wenwu Wang13Henry H. Radamson14Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThis article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 10<sup>7</sup> cm<sup>−2</sup>. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was −0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 10<sup>6</sup> cm<sup>−2</sup> and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm<sup>2</sup>/Vs, which is approximately 3 times larger than that of the Ge (132 cm<sup>2</sup>/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications.https://www.mdpi.com/2079-4991/11/6/1421Gecompressivetensileselective epitaxial growth (SEG)strainRPCVD |
| spellingShingle | Yong Du Guilei Wang Yuanhao Miao Buqing Xu Ben Li Zhenzhen Kong Jiahan Yu Xuewei Zhao Hongxiao Lin Jiale Su Jianghao Han Jinbiao Liu Yan Dong Wenwu Wang Henry H. Radamson Strain Modulation of Selectively and/or Globally Grown Ge Layers Nanomaterials Ge compressive tensile selective epitaxial growth (SEG) strain RPCVD |
| title | Strain Modulation of Selectively and/or Globally Grown Ge Layers |
| title_full | Strain Modulation of Selectively and/or Globally Grown Ge Layers |
| title_fullStr | Strain Modulation of Selectively and/or Globally Grown Ge Layers |
| title_full_unstemmed | Strain Modulation of Selectively and/or Globally Grown Ge Layers |
| title_short | Strain Modulation of Selectively and/or Globally Grown Ge Layers |
| title_sort | strain modulation of selectively and or globally grown ge layers |
| topic | Ge compressive tensile selective epitaxial growth (SEG) strain RPCVD |
| url | https://www.mdpi.com/2079-4991/11/6/1421 |
| work_keys_str_mv | AT yongdu strainmodulationofselectivelyandorgloballygrowngelayers AT guileiwang strainmodulationofselectivelyandorgloballygrowngelayers AT yuanhaomiao strainmodulationofselectivelyandorgloballygrowngelayers AT buqingxu strainmodulationofselectivelyandorgloballygrowngelayers AT benli strainmodulationofselectivelyandorgloballygrowngelayers AT zhenzhenkong strainmodulationofselectivelyandorgloballygrowngelayers AT jiahanyu strainmodulationofselectivelyandorgloballygrowngelayers AT xueweizhao strainmodulationofselectivelyandorgloballygrowngelayers AT hongxiaolin strainmodulationofselectivelyandorgloballygrowngelayers AT jialesu strainmodulationofselectivelyandorgloballygrowngelayers AT jianghaohan strainmodulationofselectivelyandorgloballygrowngelayers AT jinbiaoliu strainmodulationofselectivelyandorgloballygrowngelayers AT yandong strainmodulationofselectivelyandorgloballygrowngelayers AT wenwuwang strainmodulationofselectivelyandorgloballygrowngelayers AT henryhradamson strainmodulationofselectivelyandorgloballygrowngelayers |