Strain Modulation of Selectively and/or Globally Grown Ge Layers

Strain Modulation of Selectively and/or Globally Grown Ge Layers

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. T...

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Bibliographic Details
Main Authors: Yong Du, Guilei Wang, Yuanhao Miao, Buqing Xu, Ben Li, Zhenzhen Kong, Jiahan Yu, Xuewei Zhao, Hongxiao Lin, Jiale Su, Jianghao Han, Jinbiao Liu, Yan Dong, Wenwu Wang, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
Ge
compressive
tensile
selective epitaxial growth (SEG)
strain
RPCVD
Online Access:https://www.mdpi.com/2079-4991/11/6/1421

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