Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites
Bi0.86Ba0.14CuSeO/xCu2–ySe (0.05 ≤ x ≤ 0.15; y = 0 and 0.2) composites were fabricated by spark plasma sintering, and the crystal structure and thermoelectric properties of the Bi0.86Ba0.14CuSeO/xCu2–ySe composites were studied. The composites contained Cu2–ySe (y = 0 and 0.2) nanoinclusions in a te...
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Elsevier
2021-07-01
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author | H.Y. Hong D.H. Kim S.O. Won J.K. Lee S.D. Park S.–M. Choi S.H. Bae K. Park |
author_facet | H.Y. Hong D.H. Kim S.O. Won J.K. Lee S.D. Park S.–M. Choi S.H. Bae K. Park |
author_sort | H.Y. Hong |
collection | DOAJ |
description | Bi0.86Ba0.14CuSeO/xCu2–ySe (0.05 ≤ x ≤ 0.15; y = 0 and 0.2) composites were fabricated by spark plasma sintering, and the crystal structure and thermoelectric properties of the Bi0.86Ba0.14CuSeO/xCu2–ySe composites were studied. The composites contained Cu2–ySe (y = 0 and 0.2) nanoinclusions in a tetragonal Bi0.86Ba0.14CuSeO matrix. To increase the electrical conductivities of Bi0.86Ba0.14CuSeO, we introduced Cu2–ySe nanoinclusions with a high electrical conductivity into the matrix. The introduction of Cu2–ySe nanoinclusions reduced the structural distortion of CuSe4 tetrahedra and the effective mass, thereby enhancing the carrier mobility. A significant increase in electrical conductivities was achieved with increasing Cu2–ySe nanoinclusion, i.e., 117, 165, and 214 Ω−1cm−1 at 673 K for x = 0.05, 0.10, and 0.15 composites. The Cu2–ySe nanoinclusions reduced the lattice thermal conductivity because they strengthened the long–wavelength phonon scattering at the Bi0.86Ba0.14CuSeO/Cu2–ySe interface. The largest dimensionless figure–of–merit (0.33 at 673 K) was obtained for x = 0.15 composite, which was attributed to the highest electrical conductivity and the lowest lattice thermal conductivity. |
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issn | 2238-7854 |
language | English |
last_indexed | 2024-12-21T20:28:30Z |
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spelling | doaj.art-77e5ad6d2e904dd4b11ebec0058486f52022-12-21T18:51:18ZengElsevierJournal of Materials Research and Technology2238-78542021-07-0113894905Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe compositesH.Y. Hong0D.H. Kim1S.O. Won2J.K. Lee3S.D. Park4S.–M. Choi5S.H. Bae6K. Park7Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South KoreaFaculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South KoreaAdvanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, South KoreaEnergy Conversion Research Center, Korea Electrotechnology Research Institute, Changwon, 51543, Republic of KoreaEnergy Conversion Research Center, Korea Electrotechnology Research Institute, Changwon, 51543, Republic of KoreaSchool of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, 330−708, South KoreaSchool of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, 330−708, South KoreaFaculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea; Corresponding author.Bi0.86Ba0.14CuSeO/xCu2–ySe (0.05 ≤ x ≤ 0.15; y = 0 and 0.2) composites were fabricated by spark plasma sintering, and the crystal structure and thermoelectric properties of the Bi0.86Ba0.14CuSeO/xCu2–ySe composites were studied. The composites contained Cu2–ySe (y = 0 and 0.2) nanoinclusions in a tetragonal Bi0.86Ba0.14CuSeO matrix. To increase the electrical conductivities of Bi0.86Ba0.14CuSeO, we introduced Cu2–ySe nanoinclusions with a high electrical conductivity into the matrix. The introduction of Cu2–ySe nanoinclusions reduced the structural distortion of CuSe4 tetrahedra and the effective mass, thereby enhancing the carrier mobility. A significant increase in electrical conductivities was achieved with increasing Cu2–ySe nanoinclusion, i.e., 117, 165, and 214 Ω−1cm−1 at 673 K for x = 0.05, 0.10, and 0.15 composites. The Cu2–ySe nanoinclusions reduced the lattice thermal conductivity because they strengthened the long–wavelength phonon scattering at the Bi0.86Ba0.14CuSeO/Cu2–ySe interface. The largest dimensionless figure–of–merit (0.33 at 673 K) was obtained for x = 0.15 composite, which was attributed to the highest electrical conductivity and the lowest lattice thermal conductivity.http://www.sciencedirect.com/science/article/pii/S2238785421003604CeramicsOxide materialsElectrical transportMicrostructureThermoelectric |
spellingShingle | H.Y. Hong D.H. Kim S.O. Won J.K. Lee S.D. Park S.–M. Choi S.H. Bae K. Park Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites Journal of Materials Research and Technology Ceramics Oxide materials Electrical transport Microstructure Thermoelectric |
title | Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites |
title_full | Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites |
title_fullStr | Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites |
title_full_unstemmed | Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites |
title_short | Crystal structure and thermoelectric performance of p–type Bi0.86Ba0.14CuSeO/Cu2–ySe composites |
title_sort | crystal structure and thermoelectric performance of p type bi0 86ba0 14cuseo cu2 yse composites |
topic | Ceramics Oxide materials Electrical transport Microstructure Thermoelectric |
url | http://www.sciencedirect.com/science/article/pii/S2238785421003604 |
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