Characterization of RF Noise in UTBB FD-SOI MOSFET

Characterization of RF Noise in UTBB FD-SOI MOSFET

In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary ef...

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Bibliographic Details
Main Authors: Pragya Kushwaha, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thermal noise
high frequency noise
device modeling
RF
FDSOI
MOSFET
Online Access:https://ieeexplore.ieee.org/document/7572129/
Description
Summary:In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.
ISSN:2168-6734

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