Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostruc...

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Main Authors: Nan Zheng, S. Phillip Ahrenkiel
Format: Article
Language:English
Published: AIP Publishing LLC 2017-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4985550
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author Nan Zheng
S. Phillip Ahrenkiel
author_facet Nan Zheng
S. Phillip Ahrenkiel
author_sort Nan Zheng
collection DOAJ
description Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.
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spelling doaj.art-77f0ca91e75843d9bfc09b16d8260e9e2022-12-22T01:02:34ZengAIP Publishing LLCAIP Advances2158-32262017-07-0177075319075319-710.1063/1.4985550079707ADVEpitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlatticesNan Zheng0S. Phillip Ahrenkiel1South Dakota School of Mines & Technology, Rapid City, South Dakota 57701 U.S.ASouth Dakota School of Mines & Technology, Rapid City, South Dakota 57701 U.S.AMetamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.http://dx.doi.org/10.1063/1.4985550
spellingShingle Nan Zheng
S. Phillip Ahrenkiel
Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
AIP Advances
title Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
title_full Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
title_fullStr Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
title_full_unstemmed Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
title_short Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
title_sort epitaxial nanowire formation in metamorphic gaas gapas short period superlattices
url http://dx.doi.org/10.1063/1.4985550
work_keys_str_mv AT nanzheng epitaxialnanowireformationinmetamorphicgaasgapasshortperiodsuperlattices
AT sphillipahrenkiel epitaxialnanowireformationinmetamorphicgaasgapasshortperiodsuperlattices