Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum – scandium alloy (AlSc) and tungsten o...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9963927/ |
| _version_ | 1797342313569058816 |
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| author | Takamasa Kawanago Ryosuke Kajikawa Kazuto Mizutani Sung-Lin Tsai Iriya Muneta Takuya Hoshii Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_facet | Takamasa Kawanago Ryosuke Kajikawa Kazuto Mizutani Sung-Lin Tsai Iriya Muneta Takuya Hoshii Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_sort | Takamasa Kawanago |
| collection | DOAJ |
| description | In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum – scandium alloy (AlSc) and tungsten oxide (WOx)-based S/D contacts enable efficient electron and hole injection into WSe2 for n-type and p-type FET operation because the work function (WF) of AlSc and WOx are aligned to neighboring the conduction and valence band edge of WSe2, respectively. A dual-gate bias architecture is used to improve electrical characteristics of FETs and enhance CMOS inverter performance after device fabrication. By utilizing AlSc and WOx-based S/D contacts in conjunction with the dual-gate bias architecture, our fabricated WSe2 CMOS inverter realized a higher gain at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ dd}}$ </tex-math></inline-formula> of 1 V or higher than those in the literatures. Furthermore, the fabricated WSe2 CMOS inverter is operated at a power supply voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ dd}}$ </tex-math></inline-formula>) of as low as 0.5 V. This study paves the way towards research and development of transition metal dichalcogenides-based devices and circuits. |
| first_indexed | 2024-03-08T10:31:28Z |
| format | Article |
| id | doaj.art-78132e64be9f473e9a8658ead202977e |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T10:31:28Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-78132e64be9f473e9a8658ead202977e2024-01-27T00:02:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-0111152110.1109/JEDS.2022.32242069963927Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain ContactTakamasa Kawanago0https://orcid.org/0000-0001-5323-7085Ryosuke Kajikawa1Kazuto Mizutani2Sung-Lin Tsai3Iriya Muneta4https://orcid.org/0000-0001-7620-4948Takuya Hoshii5Kuniyuki Kakushima6Kazuo Tsutsui7https://orcid.org/0000-0002-5472-5539Hitoshi Wakabayashi8https://orcid.org/0000-0001-5509-521XFIRST, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanFIRST, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanIn this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum – scandium alloy (AlSc) and tungsten oxide (WOx)-based S/D contacts enable efficient electron and hole injection into WSe2 for n-type and p-type FET operation because the work function (WF) of AlSc and WOx are aligned to neighboring the conduction and valence band edge of WSe2, respectively. A dual-gate bias architecture is used to improve electrical characteristics of FETs and enhance CMOS inverter performance after device fabrication. By utilizing AlSc and WOx-based S/D contacts in conjunction with the dual-gate bias architecture, our fabricated WSe2 CMOS inverter realized a higher gain at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ dd}}$ </tex-math></inline-formula> of 1 V or higher than those in the literatures. Furthermore, the fabricated WSe2 CMOS inverter is operated at a power supply voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ dd}}$ </tex-math></inline-formula>) of as low as 0.5 V. This study paves the way towards research and development of transition metal dichalcogenides-based devices and circuits.https://ieeexplore.ieee.org/document/9963927/2D-FETsCMOS inverterdoping-freeWSe₂ |
| spellingShingle | Takamasa Kawanago Ryosuke Kajikawa Kazuto Mizutani Sung-Lin Tsai Iriya Muneta Takuya Hoshii Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact IEEE Journal of the Electron Devices Society 2D-FETs CMOS inverter doping-free WSe₂ |
| title | Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact |
| title_full | Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact |
| title_fullStr | Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact |
| title_full_unstemmed | Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact |
| title_short | Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact |
| title_sort | doping free complementary metal oxide semiconductor inverter based on n type and p type tungsten diselenide field effect transistors with aluminum scandium alloy and tungsten oxide for source drain contact |
| topic | 2D-FETs CMOS inverter doping-free WSe₂ |
| url | https://ieeexplore.ieee.org/document/9963927/ |
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