Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy...
| Main Authors: | , |
|---|---|
| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
MDPI AG
2024-02-01
|
| סדרה: | Electronic Materials |
| נושאים: | |
| גישה מקוונת: | https://www.mdpi.com/2673-3978/5/1/2 |