Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emit...
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| Format: | Article |
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MDPI AG
2022-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/1/11 |
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| author | Weigao Wang Yiyang Li Yu Duan Mingxia Qiu Hua An Zhengchun Peng |
| author_facet | Weigao Wang Yiyang Li Yu Duan Mingxia Qiu Hua An Zhengchun Peng |
| author_sort | Weigao Wang |
| collection | DOAJ |
| description | Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr<sub>3</sub>) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A<sup>−1</sup> and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs. |
| first_indexed | 2024-03-09T11:41:33Z |
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| id | doaj.art-789a0ae764ad4553bb6e1bedaf35ea82 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T11:41:33Z |
| publishDate | 2022-12-01 |
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| series | Micromachines |
| spelling | doaj.art-789a0ae764ad4553bb6e1bedaf35ea822023-11-30T23:32:00ZengMDPI AGMicromachines2072-666X2022-12-011411110.3390/mi14010011Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole InjectionWeigao Wang0Yiyang Li1Yu Duan2Mingxia Qiu3Hua An4Zhengchun Peng5Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaPoly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr<sub>3</sub>) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A<sup>−1</sup> and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs.https://www.mdpi.com/2072-666X/14/1/11lead halide perovskitesperovskite light-emitting diodeshole transport layersinterface modification |
| spellingShingle | Weigao Wang Yiyang Li Yu Duan Mingxia Qiu Hua An Zhengchun Peng Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection Micromachines lead halide perovskites perovskite light-emitting diodes hole transport layers interface modification |
| title | Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection |
| title_full | Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection |
| title_fullStr | Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection |
| title_full_unstemmed | Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection |
| title_short | Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection |
| title_sort | performance enhancement of perovskite quantum dot light emitting diodes via management of hole injection |
| topic | lead halide perovskites perovskite light-emitting diodes hole transport layers interface modification |
| url | https://www.mdpi.com/2072-666X/14/1/11 |
| work_keys_str_mv | AT weigaowang performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection AT yiyangli performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection AT yuduan performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection AT mingxiaqiu performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection AT huaan performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection AT zhengchunpeng performanceenhancementofperovskitequantumdotlightemittingdiodesviamanagementofholeinjection |