High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the lateral side and the width of planar side for each fin of the triple...

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Bibliographic Details
Main Authors: Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Diamond
MOSFET
triple-gate
Online Access:https://ieeexplore.ieee.org/document/8708228/

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