Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature
Abstract Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit splitting. This renormalization phenomenon has been c...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2020-11-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202000835 |
| _version_ | 1797730883418980352 |
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| author | Subash Adhikari Ji‐Hee Kim Bumsub Song Manh‐Ha Doan Minh Dao Tran Leyre Gomez Hyun Kim Hamza Zad Gul Ganesh Ghimire Seok Joon Yun Tom Gregorkiewicz Young Hee Lee |
| author_facet | Subash Adhikari Ji‐Hee Kim Bumsub Song Manh‐Ha Doan Minh Dao Tran Leyre Gomez Hyun Kim Hamza Zad Gul Ganesh Ghimire Seok Joon Yun Tom Gregorkiewicz Young Hee Lee |
| author_sort | Subash Adhikari |
| collection | DOAJ |
| description | Abstract Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, the augmented bandgap renormalization (BGR) in monolayer MoS2 anchored on CsPbBr3 perovskite quantum dots at room temperature via charge transfer is presented. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS2. The bandgap in heterostructure is red‐shifted by 84 meV with minimal pump fluence, the highest BGR in monolayer MoS2 at room temperature, which saturates with a further increase of pump fluence. Further, it is found that the magnitude of BGR inversely relates to Thomas–Fermi screening length. This provides plenty of room to explore the BGR within existing vast libraries of large bandgap van der Waals heterostructure toward practical devices such as solar cells, photodetectors, and light‐emitting‐diodes. |
| first_indexed | 2024-03-12T11:50:39Z |
| format | Article |
| id | doaj.art-78b976ca82384bbf99253b88316eca5a |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:50:39Z |
| publishDate | 2020-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-78b976ca82384bbf99253b88316eca5a2023-08-31T08:56:02ZengWiley-VCHAdvanced Materials Interfaces2196-73502020-11-01721n/an/a10.1002/admi.202000835Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room TemperatureSubash Adhikari0Ji‐Hee Kim1Bumsub Song2Manh‐Ha Doan3Minh Dao Tran4Leyre Gomez5Hyun Kim6Hamza Zad Gul7Ganesh Ghimire8Seok Joon Yun9Tom Gregorkiewicz10Young Hee Lee11IBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaVan der Waals–Zeeman Institute University of Amsterdam Science Park 904 Amsterdam 1098 XH NetherlandsIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaVan der Waals–Zeeman Institute University of Amsterdam Science Park 904 Amsterdam 1098 XH NetherlandsIBS Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon 440‐746 Republic of KoreaAbstract Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, the augmented bandgap renormalization (BGR) in monolayer MoS2 anchored on CsPbBr3 perovskite quantum dots at room temperature via charge transfer is presented. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS2. The bandgap in heterostructure is red‐shifted by 84 meV with minimal pump fluence, the highest BGR in monolayer MoS2 at room temperature, which saturates with a further increase of pump fluence. Further, it is found that the magnitude of BGR inversely relates to Thomas–Fermi screening length. This provides plenty of room to explore the BGR within existing vast libraries of large bandgap van der Waals heterostructure toward practical devices such as solar cells, photodetectors, and light‐emitting‐diodes.https://doi.org/10.1002/admi.202000835bandgap renormalizationcharge transferCsPbBr 3 quantum dotsMoS 2 monolayersroom temperature |
| spellingShingle | Subash Adhikari Ji‐Hee Kim Bumsub Song Manh‐Ha Doan Minh Dao Tran Leyre Gomez Hyun Kim Hamza Zad Gul Ganesh Ghimire Seok Joon Yun Tom Gregorkiewicz Young Hee Lee Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature Advanced Materials Interfaces bandgap renormalization charge transfer CsPbBr 3 quantum dots MoS 2 monolayers room temperature |
| title | Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature |
| title_full | Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature |
| title_fullStr | Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature |
| title_full_unstemmed | Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature |
| title_short | Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature |
| title_sort | bandgap renormalization in monolayer mos2 on cspbbr3 quantum dots via charge transfer at room temperature |
| topic | bandgap renormalization charge transfer CsPbBr 3 quantum dots MoS 2 monolayers room temperature |
| url | https://doi.org/10.1002/admi.202000835 |
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