Review on the degradation of GaN-based lateral power transistors

Review on the degradation of GaN-based lateral power transistors

Several mechanisms may contribute to the degradation of GaN transistors; in this paper we discuss the main processes that limit the lifetime of GaN power devices, with focus on the following relevant aspects: (i) the degradation/breakdown induced by off-state bias; (ii) the origin of vertical leakag...

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Bibliographic Details
Main Authors: C. De Santi, M. Buffolo, I. Rossetto, T. Bordignon, E. Brusaterra, A. Caria, F. Chiocchetta, D. Favero, M. Fregolent, F. Masin, N. Modolo, A. Nardo, F. Piva, F. Rampazzo, C. Sharma, N. Trivellin, G. Zhan, M. Meneghini, E. Zanoni, G. Meneghesso
Format: Article
Language:English
Published: Elsevier 2021-01-01
Series:e-Prime: Advances in Electrical Engineering, Electronics and Energy
Online Access:http://www.sciencedirect.com/science/article/pii/S2772671121000176

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http://www.sciencedirect.com/science/article/pii/S2772671121000176

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