Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching
<p>Abstract</p> <p>Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. Th...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/349 |
| _version_ | 1827845185986363392 |
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| author | Nikulin Valery Mussabek Gaukhar Taurbaev Yerzhan Svanbayev Eldos Taurbaev Toktar Timoshenko Victor Gonchar Kirill Mirgorodskiy Ivan Maslova Natalia |
| author_facet | Nikulin Valery Mussabek Gaukhar Taurbaev Yerzhan Svanbayev Eldos Taurbaev Toktar Timoshenko Victor Gonchar Kirill Mirgorodskiy Ivan Maslova Natalia |
| author_sort | Nikulin Valery |
| collection | DOAJ |
| description | <p>Abstract</p> <p>Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.</p> |
| first_indexed | 2024-03-12T08:53:54Z |
| format | Article |
| id | doaj.art-78e7c87518f047b795db8892c99c459a |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:53:54Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-78e7c87518f047b795db8892c99c459a2023-09-02T16:10:52ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161349Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etchingNikulin ValeryMussabek GaukharTaurbaev YerzhanSvanbayev EldosTaurbaev ToktarTimoshenko VictorGonchar KirillMirgorodskiy IvanMaslova Natalia<p>Abstract</p> <p>Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.</p>http://www.nanoscalereslett.com/content/6/1/349 |
| spellingShingle | Nikulin Valery Mussabek Gaukhar Taurbaev Yerzhan Svanbayev Eldos Taurbaev Toktar Timoshenko Victor Gonchar Kirill Mirgorodskiy Ivan Maslova Natalia Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching Nanoscale Research Letters |
| title | Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| title_full | Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| title_fullStr | Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| title_full_unstemmed | Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| title_short | Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| title_sort | efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching |
| url | http://www.nanoscalereslett.com/content/6/1/349 |
| work_keys_str_mv | AT nikulinvalery efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT mussabekgaukhar efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT taurbaevyerzhan efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT svanbayeveldos efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT taurbaevtoktar efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT timoshenkovictor efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT goncharkirill efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT mirgorodskiyivan efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching AT maslovanatalia efficientvisibleluminescenceofnanocrystallinesiliconpreparedfromamorphoussiliconfilmsbythermalannealingandstainetching |