Butterfly-shaped magnetoresistance in van der Waals ferromagnet Fe5GeTe2

We have performed magnetoresistance (MR) measurements on van der Waals ferromagnetic devices using quenched- (Q-) and nonquenched- (NQ-) Fe5GeTe2 crystals. A clear butterfly-shaped hysteresis has been observed for thin-film (less than 6 unit-cell layer) Q- and NQ-Fe5GeTe2 devices, but not for thicke...

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Bibliographic Details
Main Authors: Tomoharu Ohta, Masashi Tokuda, Shuichi Iwakiri, Kosuke Sakai, Benjamin Driesen, Yoshinori Okada, Kensuke Kobayashi, Yasuhiro Niimi
Format: Article
Language:English
Published: AIP Publishing LLC 2021-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/9.0000067
Description
Summary:We have performed magnetoresistance (MR) measurements on van der Waals ferromagnetic devices using quenched- (Q-) and nonquenched- (NQ-) Fe5GeTe2 crystals. A clear butterfly-shaped hysteresis has been observed for thin-film (less than 6 unit-cell layer) Q- and NQ-Fe5GeTe2 devices, but not for thicker film ones. The switching field of the butterfly-shaped MR is consistent with the coercive filed obtained from the Hall measurements. The MR ratio of the butterfly peak reaches about 10% at maximum, which is much larger than that observed with conventional magnetic materials. Such a large MR ratio would be related to magnetic fluctuations due to the complicated magnetic structure in this material.
ISSN:2158-3226