Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy
Recently, great advances had been made by using scanning probe microscopy (SPM) to quantify the relative permittivity of thin film materials on a nanometer scale. The imaging techniques of permittivity for thin film materials with SPM, especially for photoelectric materials, have not been fully rese...
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MDPI AG
2022-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/23/11979 |
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| author | Yongzhen Luo Xidong Ding Tianci Chen Guocong Lin Tao Su Dihu Chen |
| author_facet | Yongzhen Luo Xidong Ding Tianci Chen Guocong Lin Tao Su Dihu Chen |
| author_sort | Yongzhen Luo |
| collection | DOAJ |
| description | Recently, great advances had been made by using scanning probe microscopy (SPM) to quantify the relative permittivity of thin film materials on a nanometer scale. The imaging techniques of permittivity for thin film materials with SPM, especially for photoelectric materials, have not been fully researched until now. Here, we presented a method to image permittivity of thin film materials by using a scanning capacitance microscope (SCM). This method combined the quantitative measurement by using SCM with the capacitance gradient–distance fitting curve to obtain the two-dimensional (2D) permittivity image at room temperature under atmospheric conditions. For the demonstration, a 2D permittivity image of film of molybdenum oxide (MoO<sub>3</sub>), a kind of photoelectric material, was acquired. From the image, it could be found that the average values of permittivity of MoO<sub>3</sub> film and of MoO<sub>3</sub> film-doped NaCl were about 8.0 and 9.5, respectively. The experimental results were quantitatively consistent with other experimental results of the same material. The reported technique here could provide a novel method for imaging the relative permittivity with nanometer resolution and be helpful for the study of photoelectric materials. |
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| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T17:54:15Z |
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| spelling | doaj.art-79184fa8f9bb4fa88bf43a227603df172023-11-24T10:28:58ZengMDPI AGApplied Sciences2076-34172022-11-0112231197910.3390/app122311979Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance MicroscopyYongzhen Luo0Xidong Ding1Tianci Chen2Guocong Lin3Tao Su4Dihu Chen5School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaSchool of Physics, Sun Yat-Sen University, Guangzhou 510275, ChinaSchool of Physics, Sun Yat-Sen University, Guangzhou 510275, ChinaSchool of Physics, Sun Yat-Sen University, Guangzhou 510275, ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaRecently, great advances had been made by using scanning probe microscopy (SPM) to quantify the relative permittivity of thin film materials on a nanometer scale. The imaging techniques of permittivity for thin film materials with SPM, especially for photoelectric materials, have not been fully researched until now. Here, we presented a method to image permittivity of thin film materials by using a scanning capacitance microscope (SCM). This method combined the quantitative measurement by using SCM with the capacitance gradient–distance fitting curve to obtain the two-dimensional (2D) permittivity image at room temperature under atmospheric conditions. For the demonstration, a 2D permittivity image of film of molybdenum oxide (MoO<sub>3</sub>), a kind of photoelectric material, was acquired. From the image, it could be found that the average values of permittivity of MoO<sub>3</sub> film and of MoO<sub>3</sub> film-doped NaCl were about 8.0 and 9.5, respectively. The experimental results were quantitatively consistent with other experimental results of the same material. The reported technique here could provide a novel method for imaging the relative permittivity with nanometer resolution and be helpful for the study of photoelectric materials.https://www.mdpi.com/2076-3417/12/23/11979imaging techniquesrelative permittivitythin film materialsscanning capacitance microscopy |
| spellingShingle | Yongzhen Luo Xidong Ding Tianci Chen Guocong Lin Tao Su Dihu Chen Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy Applied Sciences imaging techniques relative permittivity thin film materials scanning capacitance microscopy |
| title | Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy |
| title_full | Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy |
| title_fullStr | Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy |
| title_full_unstemmed | Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy |
| title_short | Imaging the Permittivity of Thin Film Materials by Using Scanning Capacitance Microscopy |
| title_sort | imaging the permittivity of thin film materials by using scanning capacitance microscopy |
| topic | imaging techniques relative permittivity thin film materials scanning capacitance microscopy |
| url | https://www.mdpi.com/2076-3417/12/23/11979 |
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