The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet ful...
| Main Authors: | , , , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
Nature Portfolio
2021-01-01
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| 丛编: | npj 2D Materials and Applications |
| 在线阅读: | https://doi.org/10.1038/s41699-020-00194-w |