Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation
In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 µm were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was perf...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-10-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/6/10/1437 |
| _version_ | 1818548798039785472 |
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| author | Tiago S. Monteiro Pamakštys Kastytis Luís M. Gonçalves Graça Minas Susana Cardoso |
| author_facet | Tiago S. Monteiro Pamakštys Kastytis Luís M. Gonçalves Graça Minas Susana Cardoso |
| author_sort | Tiago S. Monteiro |
| collection | DOAJ |
| description | In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 µm were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane. |
| first_indexed | 2024-12-12T08:24:58Z |
| format | Article |
| id | doaj.art-7971fcfb70ac4bc2980b9082178bdbfe |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-12T08:24:58Z |
| publishDate | 2015-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7971fcfb70ac4bc2980b9082178bdbfe2022-12-22T00:31:17ZengMDPI AGMicromachines2072-666X2015-10-016101534154510.3390/mi6101437mi6101437Dynamic Wet Etching of Silicon through Isopropanol Alcohol EvaporationTiago S. Monteiro0Pamakštys Kastytis1Luís M. Gonçalves2Graça Minas3Susana Cardoso4Instituto de Engenharia de Sistemas de Computadores–Microsystems and Nanotechnology (INESC–MN), Rua Alves Redol, Lisboa 1000-029, PortugalInstituto de Engenharia de Sistemas de Computadores–Microsystems and Nanotechnology (INESC–MN), Rua Alves Redol, Lisboa 1000-029, PortugalMicroelectromechanical Systems Research Unit (CMEMS-UMinho), Universidade do Minho, Campus de Azurem, Guimarães 4800-058, PortugalMicroelectromechanical Systems Research Unit (CMEMS-UMinho), Universidade do Minho, Campus de Azurem, Guimarães 4800-058, PortugalInstituto de Engenharia de Sistemas de Computadores–Microsystems and Nanotechnology (INESC–MN), Rua Alves Redol, Lisboa 1000-029, PortugalIn this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 µm were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.http://www.mdpi.com/2072-666X/6/10/1437isopropanol evaporationisopropanol availabilitysilicon wet etchingmicroloading effect |
| spellingShingle | Tiago S. Monteiro Pamakštys Kastytis Luís M. Gonçalves Graça Minas Susana Cardoso Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation Micromachines isopropanol evaporation isopropanol availability silicon wet etching microloading effect |
| title | Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation |
| title_full | Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation |
| title_fullStr | Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation |
| title_full_unstemmed | Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation |
| title_short | Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation |
| title_sort | dynamic wet etching of silicon through isopropanol alcohol evaporation |
| topic | isopropanol evaporation isopropanol availability silicon wet etching microloading effect |
| url | http://www.mdpi.com/2072-666X/6/10/1437 |
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