Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves
The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the res...
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| Format: | Article |
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MDPI AG
2023-04-01
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| Online Access: | https://www.mdpi.com/2313-0105/9/5/251 |
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| author | Frederik T. Huld Jan Petter Mæhlen Caroline Keller Samson Y. Lai Obinna E. Eleri Alexey Y. Koposov Zhixin Yu Fengliu Lou |
| author_facet | Frederik T. Huld Jan Petter Mæhlen Caroline Keller Samson Y. Lai Obinna E. Eleri Alexey Y. Koposov Zhixin Yu Fengliu Lou |
| author_sort | Frederik T. Huld |
| collection | DOAJ |
| description | The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the Li<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mn>3.5</mn></mrow></msub></semantics></math></inline-formula>Si and Li<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Si phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data. |
| first_indexed | 2024-03-11T03:56:45Z |
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| institution | Directory Open Access Journal |
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| language | English |
| last_indexed | 2024-03-11T03:56:45Z |
| publishDate | 2023-04-01 |
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| series | Batteries |
| spelling | doaj.art-7976a85b1090445fa358854011efbf162023-11-18T00:28:26ZengMDPI AGBatteries2313-01052023-04-019525110.3390/batteries9050251Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge CurvesFrederik T. Huld0Jan Petter Mæhlen1Caroline Keller2Samson Y. Lai3Obinna E. Eleri4Alexey Y. Koposov5Zhixin Yu6Fengliu Lou7Beyonder, Stokkamyrveien 30, 4313 Sandnes, NorwayDepartment of Battery Technology, Institute for Energy Technology (IFE), Instituttveien 18, 2007 Kjeller, NorwayCEA, CNRS, IRIG, SYMMES, University Grenoble Alpes, 38000 Grenoble, FranceDepartment of Energy and Petroleum Engineering, University of Stavanger, Kjølv Egelands hus, Kristine Bonnevies vei, 4021 Stavanger, NorwayBeyonder, Stokkamyrveien 30, 4313 Sandnes, NorwayDepartment of Battery Technology, Institute for Energy Technology (IFE), Instituttveien 18, 2007 Kjeller, NorwayDepartment of Energy and Petroleum Engineering, University of Stavanger, Kjølv Egelands hus, Kristine Bonnevies vei, 4021 Stavanger, NorwayBeyonder, Stokkamyrveien 30, 4313 Sandnes, NorwayThe galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the Li<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mn>3.5</mn></mrow></msub></semantics></math></inline-formula>Si and Li<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Si phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data.https://www.mdpi.com/2313-0105/9/5/251silicon anodesdifferential capacitydata analysisthin filmsnanowiresincremental capacity analysis |
| spellingShingle | Frederik T. Huld Jan Petter Mæhlen Caroline Keller Samson Y. Lai Obinna E. Eleri Alexey Y. Koposov Zhixin Yu Fengliu Lou Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves Batteries silicon anodes differential capacity data analysis thin films nanowires incremental capacity analysis |
| title | Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves |
| title_full | Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves |
| title_fullStr | Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves |
| title_full_unstemmed | Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves |
| title_short | Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves |
| title_sort | revealing silicon s delithiation behaviour through empirical analysis of galvanostatic charge discharge curves |
| topic | silicon anodes differential capacity data analysis thin films nanowires incremental capacity analysis |
| url | https://www.mdpi.com/2313-0105/9/5/251 |
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