Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the res...

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Bibliographic Details
Main Authors: Frederik T. Huld, Jan Petter Mæhlen, Caroline Keller, Samson Y. Lai, Obinna E. Eleri, Alexey Y. Koposov, Zhixin Yu, Fengliu Lou
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Batteries
Subjects:
silicon anodes
differential capacity
data analysis
thin films
nanowires
incremental capacity analysis
Online Access:https://www.mdpi.com/2313-0105/9/5/251

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