Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film
As a significant parameter in tuning the structure and performance of the boron-doped diamond (BDD), the thickness was focused on the mediation of the boron doping level and electrochemical properties. BDD films with different thicknesses were deposited on silicon wafers by the hot filament chemical...
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MDPI AG
2023-03-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/28/6/2829 |
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| author | Hangyu Long Huawen Hu Kui Wen Xuezhang Liu Shuang Liu Quan Zhang Ting Chen |
| author_facet | Hangyu Long Huawen Hu Kui Wen Xuezhang Liu Shuang Liu Quan Zhang Ting Chen |
| author_sort | Hangyu Long |
| collection | DOAJ |
| description | As a significant parameter in tuning the structure and performance of the boron-doped diamond (BDD), the thickness was focused on the mediation of the boron doping level and electrochemical properties. BDD films with different thicknesses were deposited on silicon wafers by the hot filament chemical vapor deposition (HFCVD) method. The surface morphology and composition of the BDD films were characterized by SEM and Raman, respectively. It was found that an increase in the BDD film thickness resulted in larger grain size, a reduced grain boundary, and a higher boron doping level. The electrochemical performance of the electrode equipped with the BDD film was characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in potassium ferricyanide. The results revealed that the thicker films exhibited a smaller peak potential difference, a lower charge transfer resistance, and a higher electron transfer rate. It was believed that the BDD film thickness-driven improvements of boron doping and electrochemical properties were mainly due to the columnar growth mode of CVD polycrystalline diamond film, which led to larger grain size and a lower grain boundary density with increasing film thickness. |
| first_indexed | 2024-03-11T06:07:24Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-11T06:07:24Z |
| publishDate | 2023-03-01 |
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| series | Molecules |
| spelling | doaj.art-799a7269dd524389a5118385518f82042023-11-17T12:55:45ZengMDPI AGMolecules1420-30492023-03-01286282910.3390/molecules28062829Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond FilmHangyu Long0Huawen Hu1Kui Wen2Xuezhang Liu3Shuang Liu4Quan Zhang5Ting Chen6School of Materials Science and Hydrogen Energy, Foshan University, Foshan 528000, ChinaSchool of Materials Science and Hydrogen Energy, Foshan University, Foshan 528000, ChinaNational Engineering Laboratory for Modem Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, ChinaSchool of Materials and Mechanical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330013, ChinaSchool of Materials and Mechanical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330013, ChinaLiaohe Petroleum Exploration Bureau Limited Material Branch, Panjin 124010, ChinaSchool of Materials Science and Hydrogen Energy, Foshan University, Foshan 528000, ChinaAs a significant parameter in tuning the structure and performance of the boron-doped diamond (BDD), the thickness was focused on the mediation of the boron doping level and electrochemical properties. BDD films with different thicknesses were deposited on silicon wafers by the hot filament chemical vapor deposition (HFCVD) method. The surface morphology and composition of the BDD films were characterized by SEM and Raman, respectively. It was found that an increase in the BDD film thickness resulted in larger grain size, a reduced grain boundary, and a higher boron doping level. The electrochemical performance of the electrode equipped with the BDD film was characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in potassium ferricyanide. The results revealed that the thicker films exhibited a smaller peak potential difference, a lower charge transfer resistance, and a higher electron transfer rate. It was believed that the BDD film thickness-driven improvements of boron doping and electrochemical properties were mainly due to the columnar growth mode of CVD polycrystalline diamond film, which led to larger grain size and a lower grain boundary density with increasing film thickness.https://www.mdpi.com/1420-3049/28/6/2829diamondchemical vapor depositionfilm thicknessboron dopingelectrochemistry |
| spellingShingle | Hangyu Long Huawen Hu Kui Wen Xuezhang Liu Shuang Liu Quan Zhang Ting Chen Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film Molecules diamond chemical vapor deposition film thickness boron doping electrochemistry |
| title | Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film |
| title_full | Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film |
| title_fullStr | Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film |
| title_full_unstemmed | Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film |
| title_short | Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film |
| title_sort | thickness effects on boron doping and electrochemical properties of boron doped diamond film |
| topic | diamond chemical vapor deposition film thickness boron doping electrochemistry |
| url | https://www.mdpi.com/1420-3049/28/6/2829 |
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